OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BGU7003W,115

P1-P3P4-P6P7-P9P10-P12P13-P14
BGU7003W All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 11 April 2013 4 of 14
NXP Semiconductors
BGU7003W
Wideband silicon germanium low-noise amplifier MMIC
T
amb
= 25 C.
(1) V
CC
= 2.2 V
(2) V
CC
= 2.5 V
(3) V
CC
= 2.85 V
Fig 1. Total supply current as a function of bias resistor; typical values
T
amb
= 25 C; I
CC(tot)
= 5.0 mA; V
CC
= 2.5 V; P
drive
= 30 dBm; Z
0
= 50 .
Fig 2. Input reflection coefficient (S
11
); typical values
R
bias
(Ω)
0 70002000 4000 600050001000 3000
001aaj652
10
20
30
I
CC(tot)
(mA)
0
(1)
(2)
(3)
001aaj653
90°
-90°
5
0.5
6 GHz
100 MHz
0.2
+0.2
0
+2
+5
-5
-2
-0.2
+0.5
-0.5
+1
-1
2
1
10
0
0.2
0.6
0.4
0.8
1.0
1.0
-45°-135°
45°135°
180°
0°
BGU7003W All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 11 April 2013 5 of 14
NXP Semiconductors
BGU7003W
Wideband silicon germanium low-noise amplifier MMIC
T
amb
= 25 C; I
CC(tot)
= 5.0 mA; V
CC
= 2.5 V; P
drive
= 30 dBm; Z
0
= 50 .
Fig 3. Output reflection coefficient (S
22
); typical values
001aaj654
90°
-90°
5
0.5
6 GHz
100 MHz
0.2
+0.2
0
+2
+5
-5
-2
-0.2
+0.5
-0.5
+1
-1
2
1
10
0
0.2
0.6
0.4
0.8
1.0
1.0
-45°-135°
45°135°
180°
0°
T
amb
= 25 C; I
CC(tot)
= 5.0 mA; V
CC
= 2.5 V;
P
drive
= 30 dBm; Z
0
= 50 .
T
amb
= 25 C; I
CC(tot)
= 5.0 mA; V
CC
= 2.5 V;
P
drive
= 30 dBm; Z
0
= 50 .
Fig 4. Insertion power gain (s
21
2
) as a function of
frequency; typical values
Fig 5. Isolation (s
12
2
) as a function of frequency;
typical values
f (MHz)
0 600040002000
001aaj655
10
20
30
|s
21
|
2
(dB)
0
f (MHz)
0 600040002000
001aaj657
−40
−20
0
|s
12
|
2
(dB)
−60
BGU7003W All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 11 April 2013 6 of 14
NXP Semiconductors
BGU7003W
Wideband silicon germanium low-noise amplifier MMIC
T
amb
= 25 C; I
CC(tot)
= 5.0 mA; V
CC
= 2.5 V;
P
drive
= 30 dBm; Z
0
= 50 .
T
amb
= 25 C; I
CC(tot)
= 5.0 mA; V
CC
= 2.5 V;
P
drive
= 30 dBm; Z
0
= 50 .
Fig 6. Rollet’s stability factor as a function of
frequency; typical values
Fig 7. Minimum noise figure as a function of
frequency; typical values
001aaj659
1
K
10
−1
f (MHz)
0 600040002000
001aaj660
f (MHz)
0 600040002000
1.0
0.5
1.5
2.0
NF
min
(dB)
0
T
amb
= 25 C; I
CC(tot)
= 5.0 mA; V
CC
= 2.5 V.
Fig 8. Optimum source reflection coefficient for minimum noise figure; typical values
001aaj661
90°
-90°
5
0.5
6 GHz
100 MHz
0.2
+0.2
0
+2
+5
-5
-2
-0.2
+0.5
-0.5
+1
-1
2
1
10
0
0.2
0.6
0.4
0.8
1.0
1.0
-45°-135°
45°135°
180°
0°
P1-P3P4-P6P7-P9P10-P12P13-P14

BGU7003W,115

Mfr. #:
Buy BGU7003W,115
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier Wideband silicon low noise amp MMIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet