BGU7003W All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 11 April 2013 7 of 14
NXP Semiconductors
BGU7003W
Wideband silicon germanium low-noise amplifier MMIC
8. Application information
8.1 High-ohmic FM LNA
[1] See application note: AN11034 for details.
[2] I
CC(tot)
= I
CC
+ I
RF_OUT
+ I
R_BIAS
.
[3] The third order intercept point is measured at 30 dBm per tone at RF_IN (f
1
= 100 MHz; f
2
= 100.2 MHz)
T
amb
= 25 C; I
CC(tot)
= 5.0 mA; V
CC
= 2.5 V.
Normalized to 50 .
Fig 9. Equivalent noise resistance as a function of frequency; typical values
f (MHz)
0 600040002000
001aaj662
0.1
0.2
0.3
r
n(eq)
0
Table 9. Characteristics
[1]
T
amb
= 25
C; V
CC
= 2.85 V; I
CC(tot)
= 3.2 mA
[2]
; V
ENABLE
0.7 V; f = 100 MHz; Z
S
= Z
L
= 50
unless
otherwise specified. All measurements are done with the SMA-connectors as reference plane.
Symbol Parameter Conditions Min Typ Max Unit
NF noise figure - 1.2 - dB
s
21
2
Insertion power gain - 13 - dB
RL
in
input return loss - 0.5 - dB
RL
out
output return loss - 16.5 - dB
P
i(1dB)
input power at 1 dB gain compression - 23 - dBm
P
L(1dB)
output power at 1 dB gain compression - 11 - dBm
IP3
I
input third-order intercept point
[3]
- 15 - dBm
IP3
O
output third-order intercept point
[3]
- 2- dBm
