Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
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6
PMPB55ENEA
60 V, N-channel Trench MOSFET
6 June 2016 Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Tin-plated 100 % solderable side pads for optical solder inspection
ElectroStatic Discharge (ESD) protection > 2 kV
AEC-Q101 qualified
3. Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage - - 60 V
V
GS
gate-source voltage
T
j
= 25 °C
-20 - 20 V
I
D
drain current V
GS
= 10 V; T
amb
= 25 °C [1] - - 4 A
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 4 A; T
j
= 25 °C - 42 56
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm
2
.
NXP Semiconductors
PMPB55ENEA
60 V, N-channel Trench MOSFET
PMPB55ENEA All information provided in this document is subject to legal disclaimers.
©
NXP Semiconductors N.V. 2016. All rights reserved
Product data sheet 6 June 2016 2 / 16
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
7 D drain
8 S source
DFN2020MD-6 (SOT1220)
017aaa255
G
D
S
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMPB55ENEA DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline
package; no leads; 6 terminals
SOT1220
7. Marking
Table 4. Marking codes
Type number Marking code
PMPB55ENEA 2G

PMPB55ENEAX

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET PMPB55ENEA/SOT1220/REEL 7" Q1/
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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