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PMPB55ENEAX
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P17
NXP Semiconductors
PMPB55ENEA
60 V, N-channel Trench MOSFET
PMPB55ENEA
All information provided in this document is subject to legal disclaimers.
©
NXP Semiconductors N.V. 2016. All rights reserved
Product data sheet
6 June 2016
9 / 16
Q
G
(nC)
0
8
6
4
2
aaa-022670
10
V
GS
(V)
0
2
4
6
8
V
DS
= 30 V; I
D
= 4 A
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
Fig. 15. Gate charge waveform definitions
V
SD
(V)
0
0.4
0.8
1.2
aaa-022671
5
I
S
(A)
0
1
2
3
4
T
j
= 150 ºC
T
j
= 25 ºC
V
GS
= 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t
1
t
2
P
t
006aaa812
duty cycle δ
=
t
1
t
2
Fig. 17. Duty cycle definition
NXP Semiconductors
PMPB55ENEA
60 V, N-channel Trench MOSFET
PMPB55ENEA
All information provided in this document is subject to legal disclaimers.
©
NXP Semiconductors N.V. 2016. All rights reserved
Product data sheet
6 June 2016
10 / 16
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
NXP Semiconductors
PMPB55ENEA
60 V, N-channel Trench MOSFET
PMPB55ENEA
All information provided in this document is subject to legal disclaimers.
©
NXP Semiconductors N.V. 2016. All rights reserved
Product data sheet
6 June 2016
11 / 16
12. Package outline
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
SOT1220
sot1220_po
12-04-23
12-04-30
Unit
mm
min
nom
max
1.9
1.0
0.65
A
Dimensions (mm are the original dimensions)
Note
1. Dimension A is including plating thickness.
DFN2020MD-6: plastic thermal enhanced ultra
thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1220
A
1
bp
0.25
D
D
1
E
1
E
2
e
0.27
0.64
J
1
L
p
v
0.05
y
0.1
y
1
0.51
1.1
0.2
0.1
0.61
1.3
0.3
0.65
0.04
2.1
1.2
0.35
scale
J
0
2 mm
0.2
0.3
D
2
E
1.9
2.1
(8×)
X
detail X
A
E
1
E
2
D
2
J
J
1
L
p
A
1
e
e
D
1
1
2
3
6
5
4
pin 1
index area
solderable lead
end protrusion
max. 0.02 mm (6×)
pin 1
index area
B
A
E
D
bp (6×)
C
y
C
y
1
A
B
v
Fig. 18. Package outline DFN2020MD-6 (SOT1220)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P17
PMPB55ENEAX
Mfr. #:
Buy PMPB55ENEAX
Manufacturer:
Nexperia
Description:
MOSFET PMPB55ENEA/SOT1220/REEL 7" Q1/
Lifecycle:
New from this manufacturer.
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