PMPB55ENEAX Datasheet PMPB55ENEAX | P7-P9

NXP Semiconductors

PMPB55ENEA

60 V, N-channel Trench MOSFET

PMPB55ENEA All information provided in this document is subject to legal disclaimers.

©

Product data sheet 6 June 2016 6 / 16

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source

breakdown voltage

I

D

= 250 µA; V

GS

= 0 V; T

j

= 25 °C 60 - - V

V

GSth

gate-source threshold

voltage

I

D

= 250 µA; V

DS

=V

GS

; T

j

= 25 °C 1.3 1.7 2.7 V

I

DSS

drain leakage current V

DS

= 60 V; V

GS

= 0 V; T

j

= 25 °C - - 1 µA

V

GS

= 20 V; V

DS

= 0 V; T

j

= 25 °C - - 10 µA

V

GS

= -20 V; V

DS

= 0 V; T

j

= 25 °C - - -10 µA

V

GS

= 10 V; V

DS

= 0 V; T

j

= 25 °C - - 1 µA

I

GSS

gate leakage current

V

GS

= -10 V; V

DS

= 0 V; T

j

= 25 °C - - -1 µA

V

GS

= 10 V; I

D

= 4 A; T

j

= 25 °C - 42 56 mΩ

V

GS

= 10 V; I

D

= 4 A; T

j

= 150 °C - 80 106 mΩ

R

DSon

drain-source on-state

resistance

V

GS

= 4.5 V; I

D

= 3.5 A; T

j

= 25 °C - 48 69 mΩ

g

fs

forward

transconductance

V

DS

= 10 V; I

D

= 4 A; T

j

= 25 °C - 17 - S

R

G

gate resistance f = 1 MHz - 2.7 - Ω

Dynamic characteristics

Q

G(tot)

total gate charge - 7.5 12 nC

Q

GS

gate-source charge - 1 - nC

Q

GD

gate-drain charge

V

DS

= 30 V; I

D

= 4 A; V

GS

= 10 V;

T

j

= 25 °C

- 1.2 - nC

C

iss

input capacitance - 435 - pF

C

oss

output capacitance - 47 - pF

C

rss

reverse transfer

capacitance

V

DS

= 30 V; f = 1 MHz; V

GS

= 0 V;

T

j

= 25 °C

- 26 - pF

t

d(on)

turn-on delay time - 4.5 - ns

t

r

rise time - 4 - ns

t

d(off)

turn-off delay time - 13.5 - ns

t

f

fall time

V

DS

= 30 V; I

D

= 4 A; V

GS

= 10 V;

R

G(ext)

= 6 Ω; T

j

= 25 °C

- 7 - ns

Source-drain diode

V

SD

source-drain voltage I

S

= 1.2 A; V

GS

= 0 V; T

j

= 25 °C - 0.8 1.2 V

NXP Semiconductors

PMPB55ENEA

60 V, N-channel Trench MOSFET

PMPB55ENEA All information provided in this document is subject to legal disclaimers.

©

Product data sheet 6 June 2016 7 / 16

V

DS

(V)

0 1 2 3 4 5

aaa-022662

8

4

12

16

I

D

(A)

0

V

GS

= 2.5 V

2.8 V

3.2 V

3.0 V

10 V

4.5 V

3.4 V

T

j

= 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

aaa-022663

V

GS

(V)

0 31 2

10

-4

10

-5

10

-3

I

D

(A)

10

-6

min typ max

V

DS

= 10 V

T

j

= 25 °C

Fig. 7. Sub-threshold drain current as a function of gate-

source voltage

I

D

(A)

0 16124 8

aaa-022664

180

R

DSon

(mΩ)

0

3 V2.8 V2.5 V 3.2 V

V

GS

= 10 V

3.4 V

4.5 V

30

60

90

120

150

T

j

= 25 °C

Fig. 8. Drain-source on-state resistance as a function of

drain current; typical values

V

GS

(V)

0 2 4 6 8 10

aaa-022665

180

R

DSon

(mΩ)

0

30

60

90

120

150

T

j

= 150 °C

T

j

= 25 °C

I

D

= 4 A

Fig. 9. Drain-source on-state resistance as a function of

gate-source voltage; typical values

NXP Semiconductors

PMPB55ENEA

60 V, N-channel Trench MOSFET

PMPB55ENEA All information provided in this document is subject to legal disclaimers.

©

Product data sheet 6 June 2016 8 / 16

V

GS

(V)

0 1 2 3 4

aaa-022666

16

I

D

(A)

0

4

8

12

T

j

= 150 °C

T

j

= 25 °C

V

DS

> I

D

x R

DSon

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

T

j

(°C)

-60 1801200 60

aaa-022667

2

a

0

0.5

1

1.5

Fig. 11. Normalized drain-source on-state resistance as

a function of ambient temperature; typical values

T

j

(°C)

-60 1801200 60

aaa-022668

4

V

GS(th)

(V)

0

1

2

3

max

typ

min

I

D

= 250 μA; V

DS

= V

GS

Fig. 12. Gate-source threshold voltage as a function of

ambient temperature

V

DS

(V)

10

-1

10

2

101

aaa-022669

10

3

C

(pF)

1

10

2

10

C

iss

C

rss

C

oss

f = 1 MHz; V

GS

= 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical values

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