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NCV7707DQR2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P38
NCV7707, NCV7707B
www.onsemi.com
10
ELECTRICAL CHARACTERISTICS (continued)
4.5 V < V
CC
< 5.25 V, 8 V < Vs < 18 V, −40°C < T
J
< 150°C; unless otherwise noted.
Symbol UnitMaxTypMinTest ConditionsParameter
SAFE LOCK, MIRROR FOLD OUTPUT OUT6
Ron_out6
On−resistance HS or LS
T
J
= 25°C, Iout6 = ±1.5 A 0.3
W
T
J
= 125°C, Iout6 = ±1.5 A 0.6
Ioc6_hs Overcurrent threshold HS −5 −3 A
Ioc6_ls Overcurrent threshold LS 3 5 A
Vlim
Vds voltage limitation HS
or LS
2 3 V
Iuld6_hs
Underload detection
threshold HS
−80 −5 mA
Iuld6_ls
Underload detection
threshold LS
10 80 mA
td_HS6(on)
Output delay time, HS
Driver on
Time from CSB going high to
V(OUT6) = 0.1·Vs / 0.9·Vs (on/off)
2.5 12
ms
td_HS6(off)
Output delay time, HS
Driver off
3 12
ms
td_LS6(on)
Output delay time, LS
Driver on
Time from CSB going low to
V(OUT6) = 0.9·Vs / 0.1·Vs (on/off)
1 12
ms
td_LS6(off)
Output delay time, LS
Driver off
1.5 12
ms
tdLH6
Cross conduction
protection time,
low−to−high transition
including LS slew−rate
0.5 22
ms
tdHL6
Cross conduction
protection time,
high−to−low transition
including HS slew−rate
5.5 22
ms
Ileak_act_hs6
Output HS leakage current,
Active mode
V(OUT6) = 0 V −40 −16
mA
Ileak_act_ls6
Output pull−down current,
Active mode
V(OUT6) = VS 100 160
mA
Ileak_stdby_hs6
Output pull−down current,
Standby mode
V(OUT6) = 0 V −5
mA
Ileak_stdby_ls6
Output LS leakage current,
Standby mode
V(OUT6) = VS, T
J
w 25°C
V(OUT6) = VS, T
J
< 25°C
80
120
175
mA
mA
td_uld6 Underload blanking delay 430 3000
ms
td_old6
Overload shutdown
blanking delay
5 25
ms
frec6L
Recovery frequency, slow
recovery mode
CONTROL_3.OCRF = 0 1 4 kHz
frec6H
Recovery frequency, fast
recovery mode
CONTROL_3.OCRF = 1 2 6 kHz
dVout6 Slew rate of HS driver
Vs = 13.5 V, Rload = 16 W to GND
1 2 3
V/ms
NCV7707, NCV7707B
www.onsemi.com
11
ELECTRICAL CHARACTERISTICS (continued)
4.5 V < V
CC
< 5.25 V, 8 V < Vs < 18 V, −40°C < T
J
< 150°C; unless otherwise noted.
Symbol UnitMaxTypMinTest ConditionsParameter
BULB / LED DRIVER OUTPUTS OUT7, OUT8
Ron_out7,8_ICB
On−resistance to supply,
HS switch, Bulb mode
T
J
= 25°C, Iout7,8 = −1 A 0.3
W
T
J
= 125°C, Iout7,8 = −1 A 0.6
Ron_out7,8_LED
On−resistance to supply,
HS switch, LED mode
T
J
= 25°C, Iout7,8 = −0.2 A 1.4
W
T
J
= 125°C, Iout7,8 = −0.2 A 3
Ilim7,8_ICB
Output current limitation to
GND, Bulb mode
−3.7 −2.5 A
Ilim7,8_LED
Overcurrent threshold,
LED mode
−1.1 −0.5 A
Iuld7,8_ICB
Underload detection
threshold, Bulb mode
−60 −5 mA
Iuld7,8_LED
Underload detection
threshold, LED mode
−15 −5 mA
td_OUT7,8_ICB(on)
Output delay time, Driver
on,
Bulb mode
Time from CSB going high to
V(OUT7,8) = 0.1·Vs / 0.9·Vs (on/
off);
Rload = 16 W
15 48
ms
td_OUT7,8_ICB(off)
Output delay time, Driver
off,
Bulb mode
21 48
td_OUT7,8_LED(on)
Output delay time, Driver
on,
LED mode
Time from CSB going high to
V(OUT7,8) = 0.1·Vs / 0.9·Vs (on/
off);
Rload = 64 W
15 48
ms
td_OUT7,8_LED(off)
Output delay time, Driver
off,
LED mode
21 48
Ileak_act7,8
Output leakage current,
Active mode
V(OUT7,8) = 0 V −15
mA
Ileak_stdby7,8
Output leakage current,
Standby mode
V(OUT7,8) = 0 V −5
mA
Ileak_out_vs7,8 Output pull−down current V(OUT7,8) = VS 1 mA
td_uld7,8 Underload blanking delay 430 3000
ms
td_old_ICB7,8
Overload shutdown
blanking delay, Bulb mode
100 160
ms
td_old_LED7,8
Overload shutdown
blanking delay, LED mode
only
10 100
ms
frec7,8L
Recovery frequency, slow
recovery mode recovery
CONTROL_3.OCRF = 0 1 2.1 kHz
frec7,8H
Recovery frequency, fast
recovery mode (LED mode
only)
CONTROL_3.OCRF = 1 2 6 kHz
dVout7,8_ICB Slew rate, Bulb mode
Vs = 13.5 V, Rload = 16 W
0.2
V/ms
dVout7,8_LED Slew rate, LED mode
Vs = 13.5 V, Rload = 64 W
0.2
V/ms
dVout7,8_ocr
Slew rate in overcurrent
recovery mode
Vs = 13.5 V, Rload = 5 W
1 2 3
V/ms
NCV7707, NCV7707B
www.onsemi.com
12
ELECTRICAL CHARACTERISTICS (continued)
4.5 V < V
CC
< 5.25 V, 8 V < Vs < 18 V, −40°C < T
J
< 150°C; unless otherwise noted.
Symbol UnitMaxTypMinTest ConditionsParameter
LED DRIVER OUTPUTS OUT9, OUT10
Ron_out9,10
On−resistance to supply,
HS switch
T
J
= 25°C, Iout9,10 = −0.2 A 1.4
W
T
J
= 125°C, Iout9,10 = −0.2 A 3
W
Ioc9,10 Overcurrent threshold −0.63 −0.38 A
Iuld9,10
Underload detection
threshold
−16 −4 mA
td_OUT(on)9,10
Output delay time, Driver
on
Time from CSB going high to
V(OUT9,10) = 0.1·Vs / 0.9·Vs (on/
off)
18 48
ms
td_OUT(off)9,10
Output delay time, Driver
off
23 48
Ileak_act9,10
Output leakage current,
Active mode
V(OUT9,10) = 0 V −10
mA
Ileak_stdby9,10
Output leakage current,
Standby mode
V(OUT9,10) = 0 V −5
mA
Ileak_out_vs9,10 Output pull−down current V(OUT9,10) = VS 1 mA
td_uld9,10 Underload blanking delay 250 750
ms
td_old_OUT9,10
Overload shutdown
blanking delay
10 100
ms
frec9,10L
Recovery frequency, slow
recovery mode
CONTROL_3.OCRF = 0 1 4 kHz
frec9,10H
Recovery frequency, fast
recovery mode
CONTROL_3.OCRF = 1 2 6 kHz
dVout9,10 Slew rate
Vs = 13.5 V, Rload = 64 W
0.2
V/ms
HEATER OUTPUT OUT11
Ron_out11
On−resistance to supply,
HS switch
T
J
= 25°C, Iout11 = −3 A 0.1
W
T
J
= 125°C, Iout11 = −3 A 0.2
W
Ioc11 Overcurrent threshold −10 −6.0 A
Iuld11
Underload detection
threshold
−300 −30 mA
td_OUT11(on)
Output delay time, Driver
on
Time from CSB going high to
V(OUT11) = 0.1·Vs / 0.9·Vs (on/of
f)
3 12
ms
td_OUT11(off)
Output delay time, Driver
off
3 12
Ileak_act11
Output leakage current,
Active mode
V(OUT11) = 0 V −10
mA
Ileak_stdby11
Output leakage current,
Standby mode
V(OUT11) = 0 V −5
mA
Ileak_out11_vs Output pull−down current V(OUT11) = VS 1 mA
td_uld11 Underload blanking delay 430 3000
ms
td_old_OUT11
Overload shutdown
blanking delay
5 25
ms
frec11L
Recovery frequency, slow
recovery mode
CONTROL_3.OCRF = 0 1 4 kHz
frec11H
Recovery frequency, fast
recovery mode
CONTROL_3.OCRF = 1 2 6 kHz
dVout11 Slew rate
Vs = 13.5 V, Rload = 4 W
1 2 3
V/ms
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P38

NCV7707DQR2G

Mfr. #:
Buy NCV7707DQR2G
Manufacturer:
ON Semiconductor
Description:
Motor / Motion / Ignition Controllers & Drivers DOOR-MODULE DVR-IC
Lifecycle:
New from this manufacturer.
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