This is information on a product in full production.
November 2017 DocID030317 Rev 2 1/18
L6494
High voltage high and low-side 2 A gate driver
Datasheet - production data
Features
Transient withstand voltage 600 V
dV/dt immunity ± 50 V/ns in full temperature
range
Driver current capability:
– 2 A source typ. at 25 °C
– 2.5 A sink typ. at 25 °C
Short propagation delay: 85 ns
Switching times 25 ns rise/fall with 1 nF load
Integrated bootstrap diode
Single input and shutdown pin
Adjustable deadtime
3.3 V, 5 V TTL/CMOS inputs with hysteresis
UVLO on both high-side and low-side sections
Compact and simplified layout
Bill of material reduction
Flexible, easy and fast design
Applications
Motor driver for home appliances, factory
automation, industrial drives and fans
HID ballasts
Induction heating
Welding
Industrial inverters
UPS
Power supply units
DC-DC converters
Description
The L6494 is a high-voltage device manufactured
with the BCD6 “offline” technology. It is a single
chip half-bridge gate driver for N-channel power
MOSFETs or IGBTs.
The high-side (floating) section is designed to
stand a DC voltage rail up to 500 V, with 600 V
transient withstand voltage. The logic inputs are
CMOS/TTL compatible down to 3.3 V for easy
interfacing control units such as microcontrollers
or DSP.
The device is a single input gate driver with
programmable deadtime, and also features an
active-low shutdown pin.
Both device outputs can sink 2.5 A and source 2
A, making the L6494 particularly suited for
medium and high capacity power
MOSFETs\IGBTs.
The independent UVLO protection circuits
present on both the lower and upper driving
sections prevent the power switches from being
operated in low efficiency or dangerous
conditions.
The integrated bootstrap diode as well as all of
the integrated features of this driver make the
application PCB design simpler and more
compact, and help reducing the overall bill of
material.
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