ADuM4154 Data Sheet
For example, at a magnetic field frequency of 1 MHz, the
maximum allowable magnetic field of 0.5 kgauss induces a
voltage of 0.25 V at the receiving coil. This voltage is about 50%
of the sensing threshold and does not cause a faulty output
transition. If such an event occurs, with the worst-case polarity,
during a transmitted pulse, the interference reduces the received
pulse from >1.0 V to 0.75 V. This voltage is still well above the
0.5 V sensing threshold of the decoder.
The preceding magnetic flux density values correspond to
specific current magnitudes at given distances away from the
ADuM4154 transformers. Figure 16 expresses these allowable
current magnitudes as a function of frequency for selected
distances. The ADuM4154 is insensitive to external fields. Only
extremely large, high frequency currents very close to the
component are potentially a concern. For the 1 MHz example
noted, placing a 1.2 kA current 5 mm away from the
ADuM4154 affects component operation.
MAGNETIC FIELD FREQUENCY (Hz)
MAXIMUM ALLOWABLE CURRENT (kA)
1000
100
10
1
0.1
0.01
1k 10k
100M100k 1M 10M
DISTANCE = 5mm
DISTANCE = 1m
DISTANCE = 100mm
12366-016
Figure 16. Maximum Allowable Current for
Various Current to ADuM4154 Spacings
At combinations of a strong magnetic field and high frequency,
any loops formed by the PCB traces may induce sufficiently
large error voltages to trigger the thresholds of succeeding
circuitry. Take care to avoid PCB structures that form loops.
POWER CONSUMPTION
The supply current at a given channel of the ADuM4154
isolator is a function of the supply voltage, the data rate of the
channel, the output load of the channel, and whether it is a high
or low speed channel.
The low speed channels draw a constant quiescent current
caused by the internal ping-pong datapath. The operating
frequency is low enough that the capacitive losses caused by
the recommended capacitive load are negligible compared to
the quiescent current. The explicit calculation for the data rate
is eliminated for simplicity, and the quiescent current for each
side of the isolator due to the low speed channels can be found
in Table 3, Table 5, Table 7, and Table 9 for the particular operating
voltages.
These quiescent currents add to the high speed current as is
shown in the following equations for the total current for each
side of the isolator. Dynamic currents are taken from Table 3
and Table 5 for the respective voltages.
For Side 1, the supply current is given by
I
DD1
= I
DDI(D)
× (f
MCLK
+ f
MO
+ f
MSS
) + f
MI
×
(I
DDO(D)
+ ((0.5 × 10
−3
) × C
L(MI)
× V
DD1
)) + I
DD1(Q)
For Side 2, the supply current is given by
I
DD2
= I
DDI(D)
× f
SO
+
f
SCLK
× (I
DDO(D)
+((0.5 × 10
−3
) × C
L(SCLK)
× V
DD2
)) +
f
SI
× (I
DDO(D)
+((0.5 × 10
−3
) × C
L(SI)
× V
DD2
)) +
f
SSx
× (I
DDO(D)
+((0.5 × 10
−3
) × C
L(SSx)
× V
DD2
)) + I
DD2(Q)
where:
I
DDI(D)
, I
DDO(D)
are the input and output dynamic supply currents
per channel (mA/Mbps).
f
x
is the logic signal data rate for the specified channel (Mbps).
I
DD1(Q)
, I
DD2(Q)
are the specified Side 1 and Side 2 quiescent
supply currents (mA).
C
L(x)
is the load capacitance of the specified output (pF).
V
DDx
is the supply voltage of the side being evaluated (V).
Figure 4 and Figure 7 show the typical supply current per
channel as a function of data rate for an input and unloaded
output. Figure 5 and Figure 8 show the total I
DD1
and I
DD2
supply
currents as a function of data rate for ADuM4154 channel
configurations with all high speed channels running at the same
speed and the low speed channels at idle.
INSULATION LIFETIME
All insulation structures eventually break down when subjected
to voltage stress over a sufficiently long period. The rate of
insulation degradation is dependent on the characteristics of the
voltage waveform applied across the insulation, as well as the
materials and material interfaces.
Two types of insulation degradation are of primary interest:
breakdown along surfaces exposed to the air and insulation
wear out. Surface breakdown is the phenomenon of surface
tracking and the primary determinant of surface creepage
requirements in system level standards. Insulation wear out is
the phenomenon where charge injection or displacement
currents inside the insulation material cause long-term
insulation degradation.
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