DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 11: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
1GB, 2GB, 4GB (x64, SR) 240-Pin 1.35V DDR3L UDIMM
DRAM Operating Conditions
PDF: 09005aef8413b5fe
ktf8c128_256_512x64az.pdf – Rev. K 9/15 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 12: DDR3 I
DD
Specifications and Conditions – 1GB (Die Revision J)
Values are for the MT41K128M8 DDR3L SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
272 264 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
360 344 mA
Precharge power-down current: Slow exit I
DD2P0
96 96 mA
Precharge power-down current: Fast exit I
DD2P1
96 96 mA
Precharge quiet standby current I
DD2Q
120 120 mA
Precharge standby current I
DD2N
136 136 mA
Precharge standby ODT current I
DD2NT
200 192 mA
Active power-down current I
DD3P
112 112 mA
Active standby current I
DD3N
192 184 mA
Burst read operating current I
DD4R
664 576 mA
Burst write operating current I
DD4W
704 616 mA
Refresh current I
DD5B
1280 1240 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
96 96 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
112 112 mA
All banks interleaved read current I
DD7
1192 1152 mA
Reset current I
DD8
112 112 mA
1GB, 2GB, 4GB (x64, SR) 240-Pin 1.35V DDR3L UDIMM
I
DD
Specifications
PDF: 09005aef8413b5fe
ktf8c128_256_512x64az.pdf – Rev. K 9/15 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Table 13: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision K)
Values are for the MT41K256M8 DDR3L SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
312 304 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
416 400 mA
Precharge power-down current: Slow exit I
DD2P0
96 96 mA
Precharge power-down current: Fast exit I
DD2P1
112 112 mA
Precharge quiet standby current I
DD2Q
160 160 mA
Precharge standby current I
DD2N
168 168 mA
Precharge standby ODT current I
DD2NT
248 232 mA
Active power-down current I
DD3P
168 168 mA
Active standby current I
DD3N
256 240 mA
Burst read operating current I
DD4R
752 656 mA
Burst write operating current I
DD4W
776 680 mA
Refresh current I
DD5B
1440 1432 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
96 96 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
120 120 mA
All banks interleaved read current I
DD7
1248 1200 mA
Reset current I
DD8
112 112 mA
1GB, 2GB, 4GB (x64, SR) 240-Pin 1.35V DDR3L UDIMM
I
DD
Specifications
PDF: 09005aef8413b5fe
ktf8c128_256_512x64az.pdf – Rev. K 9/15 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.

MT8KTF51264AZ-1G9P1

Mfr. #:
Manufacturer:
Micron
Description:
Memory Modules DDR3 4GB UDIMM
Lifecycle:
New from this manufacturer.
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