Table 14: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision E)
Values are for the MT41K512M8 DDR3L SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8)
component data sheet
Parameter Symbol 1866 1600 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
496 440 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
560 528 mA
Precharge power-down current: Slow exit I
DD2P0
144 144 mA
Precharge power-down current: Fast exit I
DD2P1
296 256 mA
Precharge quiet standby current I
DD2Q
280 256 mA
Precharge standby current I
DD2N
280 256 mA
Precharge standby ODT current I
DD2NT
336 312 mA
Active power-down current I
DD3P
328 304 mA
Active standby current I
DD3N
328 304 mA
Burst read operating current I
DD4R
1392 1256 mA
Burst write operating current I
DD4W
1128 1000 mA
Refresh current I
DD5B
1936 1880 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
160 160 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
200 200 mA
All banks interleaved read current I
DD7
2008 1760 mA
Reset current I
DD8
160 160 mA
1GB, 2GB, 4GB (x64, SR) 240-Pin 1.35V DDR3L UDIMM
I
DD
Specifications
PDF: 09005aef8413b5fe
ktf8c128_256_512x64az.pdf – Rev. K 9/15 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
