NXP Semiconductors
BGS8H2
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
BGS8H2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 4 — 20 August 2018
12 / 15
15 Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe
precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST
61340-5, JESD625-A, or equivalent standards.
16 Abbreviations
Table 11. Abbreviations
Acronym Description
ESD ElectroStatic Discharge
HBM Human Body Model
LTE Long-Term Evolution
MMIC Monolithic Microwave Integrated Circuit
PCB Printed-Circuit Board
SiGe:C Silicon Germanium Carbon
17 Revision history
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BGS8H2 v.4 20180820 Product data sheet - BGS8H2 v.3
Modifications: changed status from company confidential to public
BGS8H2 v.3 20180629 Product data sheet - BGS8H2 v.2
Modifications: changed V
I(CTRL)
Max ON state value to V
cc
at recommended operating conditions
BGS8H2 v.2 20160404 Product data sheet - BGS8H2 v.1
Modifications: • added phase variation Table 8 on page 5 and Table 9 on page 6
BGS8H2 v.1 20151222 Product data sheet - -
