NXP Semiconductors
BGS8H2
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
BGS8H2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 4 — 20 August 2018
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9 Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
See legal section: "disclaimers" paragraph "Limiting values".
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled
[1]
-0.5 +5.0 V
V
I(CTRL)
input voltage on pin CTRL V
I(CTRL)
< V
CC
+ 0.6 V
[1][2]
-0.5 +5.0 V
V
I(RF_IN)
input voltage on pin RF_IN DC; V
I(RF_IN)
< V
CC
+ 0.6 V
[1][2]
-0.5 +5.0 V
V
I(RF_OUT)
input voltage on pin RF_OUT DC; V
I(RF_OUT)
< V
CC
+ 0.6 V
[1][2][3]
-0.5 +5.0 V
P
i
input power
[1]
- 26 dBm
P
tot
total power dissipation T
sp
≤ 130 °C - 55 mW
T
stg
storage temperature -65 +150 °C
T
j
junction temperature - 150 °C
Human Body Model (HBM) according to
ANSI/ESDA/JEDEC standard JS-001
- ±2 kVV
ESD
electrostatic discharge voltage
Charged Device Model (CDM) according to
JEDEC standard JESD22-C101C
- ±1 kV
[1] Stressed with pulses of 1 s in duration. V
CC
connected to a power supply of 2.8 V with 500 mA current limit.
[2] Warning: Due to internal ESD diode protection, to avoid excess current, the applied DC voltage must not exceed V
CC
+ 0.6 V or 5.0 V.
[3] The RF input and RF output are AC coupled through internal DC blocking capacitors.
10 Recommended operating conditions
Table 6. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage
[1]
1.5 - 3.1 V
T
amb
ambient temperature -40 +25 +85 °C
OFF state - - 0.3 VV
I(CTRL)
input voltage on pin CTRL
ON state 0.8 - V
cc
V
[1] Stressed with pulses of 1 s in duration. V
CC
connected to a power supply with 500 mA current limit.
11 Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 225 K/W
