NXP Semiconductors
BGS8H2
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
BGS8H2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 4 — 20 August 2018
8 / 15
[1] Guaranteed by device design; not tested in production.
[2] E-UTRA operating band 40 (2300 MHz to 2400 MHz).
[3] E-UTRA operating band 7 (2620 MHz to 2690 MHz).
[4] PCB losses are subtracted.
Table 9. Characteristics at V
CC
= 2.8 V
2300 MHz ≤ f ≤ 2690 MHz, V
CC
= 2.8 V, V
I(CTRL)
≥ 0.8 V and T
amb
= 25 °C. Input matched to 50 Ω using a 2.7 nH inductor in
series. Unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
between gain mode and bypass mode
f = 2350 MHz
[1]
-8 - +8 deg
Δφ phase variation
f = 2655 MHz - - - deg
Gain mode
I
CC
supply current 3.8 5.8 7.8 mA
f = 2350 MHz
[1][2]
10.5 12.5 14.5 dB
f = 2500 MHz 9.9 11.9 13.9 dB
G
p
power gain
f = 2655 MHz
[1][3]
9.2 11.2 13.2 dB
f = 2350 MHz
[2]
- 8.0 - dBRL
in
input return loss
f = 2655 MHz
[3]
- 8.5 - dB
f = 2350 MHz
[2]
- 10.0 - dBRL
out
output return loss
f = 2655 MHz
[3]
- 7.0 - dB
f = 2350 MHz
[2]
- 23.0 - dBISL isolation
f = 2655 MHz
[3]
- 23.0 - dB
f = 2350 MHz
[1][2][4]
- 1.00 1.5 dBNF noise figure
f = 2655 MHz
[1][3][4]
- 1.10 1.6 dB
f = 2350 MHz
[1][2]
-5.5 -1.5 - dBmP
i(1dB)
input power at 1 dB gain
compression
f = 2655 MHz
[1][3]
-4.0 0.0 - dBm
f = 2350 MHz
[1][2]
-1.0 +4.0 - dBmIP3
i
input third-order intercept point
f = 2655 MHz
[1][3]
-1.0 +4.0 - dBm
K Rollett stability factor 1 - -
t
on
turn-on time time from V
I(CTRL)
ON, to 90 % of the gain - - 1.3 µs
t
off
turn-off time time from V
I(CTRL)
OFF, to 10 % of the gain - - 0.3 µs
