BUK9606-55B,118 Datasheet BUK9606-55B,118, BUK9506-55B,127 | P1-P3

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

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the references to Nexperia, as shown below.

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use http://www.nexperia.com

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use

salesaddresses@nexperia.com (email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

the version, as shown below:

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Should be replaced with:

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and

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Kind regards,

Team Nexperia

BUK9506-55B

N-channel TrenchMOS FET

Rev. 04 — 23 July 2009 Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

TrenchMOS technology. This product has been designed and qualified to the appropriate

AEC standard for use in automotive critical applications.

1.2 Features and benefits

 Low conduction losses due to low

on-state resistance

 Q101 compliant

 Suitable for logic level gate drive

sources

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V and 24 V loads

 Automotive systems

 General purpose power switching

 Motors, lamps and solenoids

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 175 °C - - 55 V

drain current V

=5V; T

=25°C;

see Figure 1

and 3

[1]

--75A

tot

total power

dissipation

= 25 °C; see Figure 2 - - 258 W

Avalanche ruggedness

DS(AL)S

non-repetitive

drain-source

avalanche energy

=75A; V

sup

≤ 55 V;

=50Ω; V

=5V;

j(init)

= 25 °C; unclamped

- - 679 mJ

Dynamic characteristics

gate-drain charge V

=5V; I

=25A;

=44V; T

=25°C;

see Figure 14 and 15

-22-nC

Product data sheet Rev. 04 — 23 July 2009 2 of 13

NXP Semiconductors

BUK9506-55B

N-channel TrenchMOS FET

[1] Continuous current is limited by package.

2. Pinning information

3. Ordering information

Static characteristics

DSon

drain-source

on-state resistance

=10V; I

=25A;

= 25 °C; see Figure 11

and 12

-4.85.4mΩ

=5V; I

=25A;

= 25 °C; see Figure 11

and 12

-5.16mΩ

Table 1. Quick reference

…continued

Symbol Parameter Conditions Min Typ Max Unit

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1G gate

SOT78

(TO -2 20 AB )

2D drain

3S source

mb D mounting base; connected to

drain

bb076

Table 3. Ordering information

Type number Package

Name Description Version

BUK9506-55B TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead

TO-220AB

SOT78

P1-P3 P4-P6 P7-P9 P10-P12 P13-P14

BUK9606-55B,118

Mfr. #:

Buy BUK9606-55B,118

Manufacturer:

Nexperia

Description:

MOSFET HIGH PERF TRENCHMOS

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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BUK9606-55B,118

BUK9606-55B,118

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