BUK9506-55B_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 23 July 2009 3 of 13
NXP Semiconductors
BUK9506-55B
N-channel TrenchMOS FET
4. Limiting values
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 55 V
V
DGR
drain-gate voltage R
GS
=20kΩ -55V
V
GS
gate-source voltage -15 15 V
I
D
drain current T
mb
=25°C; V
GS
=5V; see Figure 1 and 3
[1]
-146A
[2]
-75A
T
mb
=100°C; V
GS
=5V; see Figure 1
[2]
-75A
I
DM
peak drain current T
mb
=25°C; t
p
≤ 10 µs; pulsed; see Figure 3 -587A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 -258W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C;
[1]
-146A
[2]
-75A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
=25°C - 587 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
=75A; V
sup
≤ 55 V; R
GS
=50Ω; V
GS
=5V;
T
j(init)
= 25 °C; unclamped
-679mJ
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03nh85
0
50
100
150
0 50 100 150 200
T
mb
(
°
C)
I
D
(A)
Capped at 75 A due to package
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
