BUK9506-55B_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 23 July 2009 7 of 13
NXP Semiconductors
BUK9506-55B
N-channel TrenchMOS FET
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 13
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=30V; T
j
=25°C
-64-ns
Q
r
recovered charge - 79 - nC
Table 6. Characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
Fig 7. Forward transconductance as a function of
drain current; typical values
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
03nj65
0
50
100
150
200
250
300
350
0246810
V
DS
(V)
I
D
(A)
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
10
6
4
4.2
5
V
GS
(V) is
03nj66
2
4
6
8
10
12
14
0 100 200 300 400
I
D
(A)
R
DSon
(mΩ)
V
GS
(V) is
3
3.2
10
5
4
3.4
03nj62
0
50
100
150
200
0 20406080
I
D
(A)
g
fs
(S)
03nj63
0
25
50
75
100
0123
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
T
j
= 25
°
C
