LPC2101_02_03_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 2 June 2009 22 of 37
NXP Semiconductors
LPC2101/02/03
Single-chip 16-bit/32-bit microcontrollers
7. Limiting values
[1] The following applies to the limiting values:
a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maximum.
b) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to V
SS
unless
otherwise noted.
[2] Core and internal rail.
[3] External rail.
[4] On ADC related pins.
[5] Including voltage on outputs in 3-state mode.
[6] Only valid when the V
DD(3V3)
supply voltage is present.
[7] Not to exceed 4.6 V.
[8] Per supply pin.
[9] The peak current is limited to 25 times the corresponding maximum current.
[10] Per ground pin.
[11] Dependent on package type.
[12] Performed per AEC-Q100-002.
[13] Performed per AEC-Q100-003.
[14] Performed per AEC-Q100-011.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol Parameter Conditions Min Max Unit
V
DD(1V8)
supply voltage (1.8 V)
[2]
−0.5 +2.5 V
V
DD(3V3)
supply voltage (3.3 V)
[3]
−0.5 +4.6 V
V
DDA
analog 3.3 V pad supply voltage −0.5 +4.6 V
V
i(VBAT)
input voltage on pin VBAT for the RTC −0.5 +4.6 V
V
IA
analog input voltage
[4]
−0.5 +5.1 V
V
I
input voltage 5 V tolerant I/O
pins
[5][6]
−0.5 +6.0 V
other I/O pins
[5]
−0.5 V
DD
+ 0.5
[7]
V
I
DD
supply current
[8]
- 100
[9]
mA
I
SS
ground current
[10]
- 100
[9]
mA
T
stg
storage temperature
[11]
−65 +150 °C
P
tot(pack)
total power dissipation (per package) based on package
heat transfer, not
device power
consumption
- 1.5 W
V
ESD
electrostatic discharge voltage Human Body
Model (HBM)
−4000 +4000 V
[12]
Machine Model
(MM)
−200 +200 V
[13]
Charged Device
Model (CDM)
−800 +800 V
[14]
