13
LTC1436A
LTC1436A-PLL/LTC1437A
14367afb
APPLICATIONS INFORMATION
WUU
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frequency operation down to lower currents before cycle
skipping occurs.
The R
DS(ON)
recommended for the small MOSFET is
around 0.5. Be careful not to use a MOSFET with an
R
DS(ON)
that is too low; remember, we want to conserve
gate charge. (A higher R
DS(ON)
MOSFET has a smaller gate
capacitance and thus requires less current to charge its
gate). For cost sensitive applications the small MOSFET
can be removed. The circuit will then begin Burst Mode
operation as the load current is dropped.
The peak-to-peak gate drive levels are set by the INTV
CC
voltage. This voltage is typically 5V during start-up (see
EXTV
CC
Pin Connection). Consequently, logic level
threshold MOSFETs must be used in most LTC1436A/
LTC1437A applications. The only exception is applications
in which EXTV
CC
is powered from an external supply
greater than 8V (must be less than 10V), in which standard
threshold MOSFETs [V
GS(TH)
< 4V] may be used. Pay close
attention to the BV
DSS
specification for the MOSFETs as
well; many of the logic level MOSFETs are limited to 30V
or less.
Selection criteria for the power MOSFETs include the “ON”
resistance R
SD(ON)
, reverse transfer capacitance C
RSS
,
input voltage and maximum output current. When the
LTC1436A/LTC1437A are operating in continuous mode
the duty cycles for the top and bottom MOSFETs are
given by:
Main Switch Duty Cycle =
V
V
OUT
IN
Synchronous Switch Duty Cycle =
V
IN
()
V
V
OUT
IN
Kool Mµ is a registered trademark of Magnetics, Inc.
P
V
V
IR
kV I C f
P
VV
V
IR
MAIN
OUT
IN
MAX DS ON
IN MAX RSS
SYNC
IN OUT
IN
MAX DS ON
=
()
+
()
+
() ( )( )()
=
()
+
()
()
()
2
185
2
1
1
δ
δ
.
Inductor Core Selection
Once the value for L is known, the type of inductor must
be selected. High efficiency converters generally cannot
afford the core loss found in low cost powdered iron
cores, forcing the use of more expensive ferrite,
molypermalloy, or Kool Mµ
®
cores. Actual core loss is
independent of core size for a fixed inductor value, but it
is very dependent on inductance selected. As inductance
increases, core losses go down. Unfortunately, increased
inductance requires more turns of wire and therefore
copper losses will increase.
Ferrite designs have very low core loss and are prefered at
high switching frequencies, so design goals can concen-
trate on copper loss and preventing saturation. Ferrite
core material saturates “hard,” which means that induc-
tance collapses abruptly when the peak design current is
exceeded. This results in an abrupt increase in inductor
ripple current and consequent output voltage ripple. Do
not allow the core to saturate!
Molypermalloy (from Magnetics, Inc.) is a very good, low
loss core material for toroids, but it is more expensive than
ferrite. A reasonable compromise from the same manu-
facturer is Kool Mµ. Toroids are very space efficient,
especially when you can use several layers of wire.
Because they generally lack a bobbin, mounting is more
difficult. However, designs for surface mount are available
which do not increase the height significantly.
Power MOSFET and D1 Selection
Three external power MOSFETs must be selected for use
with the LTC1436A/LTC1437A: a pair of N-channel MOS-
FETs for the top (main) switch and an N-channel MOSFET
for the bottom (synchronous) switch.
To take advantage of the Adaptive Power output stage, two
topside MOSFETs must be selected. A large (low R
SD(ON)
)
MOSFET and a small (higher R
DS(ON)
) MOSFET are
required. The large MOSFET is used as the main switch
and works in conjunction with the synchronous switch.
The smaller MOSFET is only enabled under low load
current conditions. This increases midcurrent efficiencies
while continuing to operate at constant frequency. Also, by
using the small MOSFET the circuit can maintain constant
The MOSFET power dissipations at maximum output
current are given by:
14
LTC1436A
LTC1436-PLL-A/LTC1437A
14367afb
APPLICATIONS INFORMATION
WUU
U
This formula has a maximum at V
IN
= 2V
OUT
, where
I
RMS
= I
OUT
/2. This simple worst-case condition is com-
monly used for design because even significant deviations
do not offer much relief. Note that capacitor manufacturer’s
ripple current ratings are often based on only 2000 hours
of life. This makes it advisable to further derate the
capacitor, or to choose a capacitor rated at a higher
temperature than required. Several capacitors may also be
paralleled to meet size or height requirements in the
design. Always consult the manufacturer if there is any
question.
The selection of C
OUT
is driven by the required effective
series resistance (ESR). Typically, once the ESR require-
ment is satisified, the capacitance is adequate for filtering.
The output ripple (V
OUT
) is approximated by:
∆∆V I ESR
fC
OUT L
OUT
+
1
4
where f = operating frequency, C
OUT
= output capacitance
and I
L
= ripple current in the inductor. The output ripple
is highest at maximum input voltage since I
L
increases
with input voltage. With I
L
= 0.4I
OUT(MAX)
the output
ripple will be less than 100mV at maximum V
IN
, assuming:
C
OUT
Required ESR < 2R
SENSE
Manufacturers such as Nichicon, United Chemicon and
Sanyo should be considered for high performance through-
hole capacitors. The OS-CON semiconductor dielectric
capacitor available from Sanyo has the lowest ESR (size)
product of any aluminum electrolytic at a somewhat
higher price. Once the ESR requirement for C
OUT
has been
met, the RMS current rating generally far exceeds the
I
RIPPLE(P-P)
requirement.
In surface mount applications multiple capacitors may
have to be paralleled to meet the ESR or RMS current
handling requirements of the application. Aluminum elec-
trolytic and dry tantalum capacitors are both available in
surface mount configurations. In the case of tantalum, it is
critical that the capacitors are surge tested for use in
switching power supplies. An excellent choice is the AVX
TPS series of surface mount tantalums, available in case
heights ranging from 2mm to 4mm. Other capacitor types
where δ is the temperature dependency of R
DS(ON)
and k
is a constant inversely related to the gate drive current.
Both MOSFETs have I
2
R losses while the topside
N-channel equation includes an additional term for transi-
tion losses, which are highest at high input voltages. For
V
IN
< 20V the high current efficiency generally improves
with larger MOSFETs, while for V
IN
> 20V the transition
losses rapidly increase to the point that the use of a higher
R
DS(ON)
device with lower C
RSS
actual provides higher
efficiency. The synchronous MOSFET losses are greatest
at high input voltage or during a short circuit when the
duty cycle in this switch is nearly 100%. Refer to the
Foldback Current Limiting section for further applications
information.
The term (1 + δ) is generally given for a MOSFET in the
form of a normalized R
DS(ON)
vs temperature curve, but
δ = 0.005/°C can be used as an approximation for low
voltage MOSFETs. C
RSS
is usually specified in the MOSFET
characteristics. The constant k = 2.5 can be used to
estimate the contributions of the two terms in the main
switch dissipation equation.
The Schottky diode D1 shown in Figure 1 serves two
purposes. During continuous synchronous operation, D1
conducts during the dead-time between the conduction of
the two large power MOSFETs. This prevents the body
diode of the bottom MOSFET from turning on and storing
charge during the dead-time, which could cost as much as
1% in efficiency. During low current operation, D1 oper-
ates in conjunction with the small top MOSFET to provide
an efficient low current output stage. A 1A Schottky is
generally a good compromise for both regions of opera-
tion due to the relatively small average current.
C
IN
and C
OUT
Selection
In continuous mode, the source current of the top
N-channel MOSFET is a square wave of duty cycle V
OUT
/
V
IN
. To prevent large voltage transients, a low ESR input
capacitor sized for the maximum RMS current must be
used. The maximum RMS capacitor current is given by:
CI
VVV
V
IN MAX
OUT IN OUT
IN
Required I
RMS
()
[]
12
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15
LTC1436A
LTC1436A-PLL/LTC1437A
14367afb
APPLICATIONS INFORMATION
WUU
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include Sanyo OS-CON, Nichicon PL series and Sprague
593D and 595D series. Consult the manufacturer for other
specific recommendations.
INTV
CC
Regulator
An internal P-channel low dropout regulator produces the
5V supply that powers the drivers and internal circuitry
within the LTC1436A/LTC1437A. The INTV
CC
pin can
supply up to 15mA and must be bypassed to ground with
a minimum of 2.2µF tantalum or low ESR electrolytic.
Good bypassing is necessary to supply the high transient
currents required by the MOSFET gate drivers.
High input voltage applications, in which large MOSFETs
are being driven at high frequencies, may cause the
maximum junction temperature rating for the LTC1436A/
LTC1437A to be exceeded. The IC supply current is
dominated by the gate charge supply current when not
using an output derived EXTV
CC
source. The gate charge
is dependent on operating frequency as discussed in the
Efficiency Considerations section. The junction tempera-
ture can be estimated by using the equations given in Note
1 of the Electrical Characteristics. For example, the
LTC1437A is limited to less than 19mA from a 30V supply:
TVCWC
J
= 70 C+ 19mA°
()()
°
()
30 95 124/
To prevent maximum junction temperature from being
exceeded, the input supply current must be checked when
operating in continuous mode at maximum V
IN
.
EXTV
CC
Connection
The LTC1436A/LTC1437A contain an internal P-channel
MOSFET switch connected between the EXTV
CC
and
INTV
CC
pins. The switch closes and supplies the INTV
CC
power whenever the EXTV
CC
pin is above 4.8V, and
remains closed until EXTV
CC
drops below 4.5V. This
allows the MOSFET driver and control power to be derived
from the output during normal operation (4.8V < V
OUT
<
9V) and from the internal regulator when the output is out
of regulation (start-up, short circuit). Do not apply greater
than 10V to the EXTV
CC
pin and ensure that EXTV
CC
< V
IN
.
Significant efficiency gains can be realized by powering
INTV
CC
from the output, since the V
IN
current resulting
from the driver and control currents will be scaled by a
factor of Duty Cycle
/
Efficiency. For 5V regulators this
supply means connecting the EXTV
CC
pin directly to V
OUT
.
However, for 3.3V and other lower voltage regulators,
additional circuitry is required to derive INTV
CC
power
from the output.
The following list summarizes the four possible connec-
tions for EXTV
CC
:
1. EXTV
CC
left open (or grounded). This will cause INTV
CC
to be powered from the internal 5V regulator resulting
in an efficiency penalty of up to 10% at high input
voltages.
2. EXTV
CC
connected directly to V
OUT
. This is the normal
connection for a 5V regulator and provides the highest
efficiency.
3. EXTV
CC
connected to an output-derived boost network.
For 3.3V and other low voltage regulators, efficiency
gains can still be realized by connecting EXTV
CC
to an
output-derived voltage which has been boosted to
greater than 4.8V. This can be done with either the
inductive boost winding as shown in Figure 4a or the
capacitive charge pump shown in Figure 4b. The charge
pump has the advantage of simple magnetics.
4. EXTV
CC
connected to an external supply. If an external
supply is available in the 5V to 10V range (EXTV
CC
<
V
IN
), it may be used to power EXTV
CC
, providing it is
compatible with the MOSFET gate drive requirements.
When driving standard threshold MOSFETs, the exter-
nal supply must always be present during operation to
prevent MOSFET failure due to insufficient gate drive.
Figure 4a. Secondary Output Loop and EXTV
CC
Connection
R6
R5
EXTV
CC
V
IN
TGL
TGS
SW
BG
PGND
LTC1436A
LTC1437A
N-CH
N-CH
N-CH
+
C
IN
V
IN
1N4148
+
1µF
+
C
OUT
V
SEC
T1
1:N
R
SENSE
V
OUT
OPTIONAL EXTV
CC
CONNECTION
5V V
SEC
9V
1436 F04a
SFB
SGND

LTC1436ACGN-PLL

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
IC REG CTRLR BUCK 24SSOP
Lifecycle:
New from this manufacturer.
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