Parameter Symbol Test Condition Min Typ Max Unit
Current Consumption I
DD
Conversion in progress:
V
DD
= 1.8 V
V
DD
= 3.3 V
V
DD
= 5 V
3.5
5
6.8
4.5
6
8.5
mA
High voltage parts (V
DD
= 3.3 to
26.5 V)
6.5 8.5 mA
Sleep mode 50 1000 nA
Idle mode (Si7210/2/3/4) 360 700 µA
Idle mode (Si7205/06) 860 1200 µA
Sleep timer enabled average at
V
DD
= 3.3 V and 200 msec sleep
time
0.4 µA
Conversion Time T
CONV
First conversion when waking from
sleep or idle
11 µs
Additional conversions in a burst 8.8 µs
Sleep Time
2
T
SLEEP
Factory configurable from 1 to 200
msec ±20%
Idle Time
3
T
IDLE
Minimum 11.9 13.2 14.5 usec
Maximum 185 206 227 msec
Wake Up Time T
WAKE
Time from V
DD
> 1.7 V to first
measurement
1 msec
Note:
1. TAMPERb and DIS pin specifications apply when the pin is present. These functions are only supported for the V
DD
range of 1.7
– 5.5 V (Si7203/4).
2. Parts go to sleep or idle mode between measurements. Sleep time can be factory programmed from 0.875 msec to 254 msec
nominal with accuracy of ±30%. Typically, sleep time is set to 100 msec and the sleep time counter is adjusted to give accuracy
within ±10%.
3. Idle time can be factory programmed from 13.2 μsec to 206 msec ±10% or set to zero in which case conversions are done every
8.8 μsec. Normally idle time is only used at higher sample speeds.
4. For high voltage parts (V
DD
= 26.5 V maximum), the power on ramp should be faster than 10 V per second in the start-up region
from 2 to 3 V.
Table 1.3. Output Pin Specifications
Parameter Symbol Test Condition Min Typ Max Unit
Si7201/2/3/4
Output Voltage Low
Open Drain or Push Pull
V
OL
I
OL
= 3 mA
V
DD
> 2 V
0.4 V
I
OL
= 2 mA
V
DD
> 1.7 V
0.2 V
I
OL
= 6 mA
V
DD
> 2 V
0.6 V
Si720x Switch/Latch Hall Effect Magnetic Position Sensor Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 0.92 | 4
Parameter Symbol Test Condition Min Typ Max Unit
Leakage
Output High
Output Pin Open Drain
I
OH
1 µA
Output Voltage High
Output Pin Push Pull
V
OH
I
OH
= 2 mA
V
DD
> 2.25 V
V
DD
– 0.4 V
Slew Rate T
SLEW
5 %V
DD
/nS
Si7205/6
Output Voltage Low V
OL
I
OL
= 11.4 mA
V
DD
> 6 V
0.4 V
Safe Continuous Sink Current 20 mA
Leakage
Output High
Output Pin Open Drain
I
OH
1 µA
Slew Rate
Digital Output Mode
T
SLEW
5 %V
DD
/nS
Output Pin Shorted to V
DD
I
SHORT
V
DD
= 12 V
Average current as pin cycles
4 mA
The Si7205 and Si7206 can be configured to signal the status equivalent to output high or low by modulating the power supply current.
If configured in this way, the following are the specifications for the amount of current that will be drawn for the “output high” state.
Table 1.4. I
DD
Signaling
Parameter Symbol Test Condition Min Typ Max Unit
I
DD
Signaling Current I
DO
V
DDH
> 6 V 8 10 12 mA
Table 1.5. Magnetic Sensor
2
Parameter Symbol Test Condition Min Typ Max Unit
Offset
1
B
OFF
20 mT scale
V
DD
= 1.71 to 3.6 V
0-70°C
±150 ±250 µT
20 mT scale
V
DD
= 1.71 to 5.5 V
Full temperature range
±250 +450,
-350
µT
Gain Accuracy 0-70°C 5 %
Full temperature range 10 %
RMS Noise
3
Room temp, 20 mT range, V
DD
= 5
V
30 µT rms
Si720x Switch/Latch Hall Effect Magnetic Position Sensor Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 0.92 | 5
Parameter Symbol Test Condition Min Typ Max Unit
Note:
1. See the 5. Ordering Guide to determine Bop/Brp for various OPNs.
2. See the 5. Ordering Guide for operating a release points. These are defined as maximum operating point and minimum release
point -40 °C to +150 °C and do not include the effect of noise.
3. For a single conversion. This can be reduced by the square root of N by filtering over N samples. See ordering guide for samples
taken per measurement.
Table 1.6. Temperature Compensation
Parameter Symbol Test Condition Min Typ Max Unit
Bop and Brp vs Temperature No compensation
0-70°C
< ±0.05 %/°C
Neodymium compensation -0.12 %/°C
Ceramic compensation -0.2 %/°C
Table 1.7. Thermal Characteristics
Parameter Symbol Test Condition Value Unit
Junction to Air Thermal Resistance θ
JA
JEDEC 4 layer board no airflow SOT23-5 212.8 °C/W
Junction to Board Thermal Resistance θ
JB
JEDEC 4 layer board no airflow SOT23-5 45 °C/W
Junction to Air Thermal Resistance θ
JA
JEDEC 4 layer board no airflow SOT23-3 254.6 °C/W
Junction to Board Thermal Resistance θ
JB
JEDEC 4 layer board no airflow SOT23-3 54.8 °C/W
Si720x Switch/Latch Hall Effect Magnetic Position Sensor Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 0.92 | 6

SI7201-B-05-IV

Mfr. #:
Manufacturer:
Silicon Labs
Description:
MAGNETIC SWITCH OMNIPOLAR
Lifecycle:
New from this manufacturer.
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