HAL 1820 DATA SHEET
18 July 3, 2013; DSH000158_003EN Micronas
3.6. Characteristics
at T
J
= 40 °C to +170 °C (for temperature type A), V
SUP
= 4.5 V to 5.5 V, GND = 0 V, after programming the sensor
and locking the EEPROM,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for T
J
= 25 °C and V
SUP
= 5 V.
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
I
SUP
Supply Current
over Temperature Range
1 710mA
Resolution 3 10 Bit
INL Non-Linearity of Output
Voltage over Temperature
3 1.0 0 1.0 % % of supply voltage
1)
E
R
Ratiometric Error of Output
over Temperature
(Error in V
OUT
/ V
SUP
)
3 1.0 0 1.0 %
V
OUTH
Output High Voltage 3 4.7 4.9 V V
SUP
= 5 V, I
OUT
= +/ 1 mA
2)
V
OUTL
Output Low Voltage 3 0.1 0.3 V V
SUP
= 5 V, I
OUT
= +/ 1 mA
2)
t
r(O)
Response Time of Output
3)
3 0.5 1 ms C
L
= 10 nF, time from 10% to
90% of final output voltage for a
step like
signal B
step
from 0 mT to B
max
t
POD
Power-Up Time (Time to
reach stabilized Output
Voltage)
3)
11.5msC
L
= 10 nF, 90% of V
OUT
BW Small Signal Bandwidth (
3dB)
3)
3 2.25 2.5 kHz B
AC
< 10 mT
V
OUTn
Output RMS Noise
3)
3 2.6 5 mV B = 5% to 95% of B
max
R
OUT
Output Resistance over
Recommended Operating
Range
3)
3 60 V
OUTLmax
V
OUT
V
OUTHmin
V
PORLH
Power-On Reset Level from
V
SUPLow
to V
SUPHigh
1 3.9 4.35 4.5 V
V
PORHL
Power-On Reset Level from
V
SUPHigh
to V
SUPLow
13.84.24.4V
V
PORHYS
Power-On Reset Hysteresis 1 0.1 0.175 0.3 V
V
DIAG
Output Voltage in case of
Error Detection
30 300 mV
TO92UA Package
R
thja
R
thjc
Thermal Resistance
junction to air
junction to case
250
70
K/W
K/W
Measured with a 1s0p board
SOT89B Package
R
thja
R
thjc
Thermal Resistance
junction to air
junction to case
210
60
K/W
K/W
Measured with a 1s0p board
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 3–6)
1)
If more than 50% of the selected magnetic field range are used and V
OUT
is between 0.3 V and 4.7 V
2)
Linear output range
3)
Guaranteed by design
