R10DS0231EJ0200 Rev.2.00 Page 1 of
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2015.06.26
RMLV0816BGSB - 4S2
8Mb Advanced LPSRAM (512k word × 16bit)
Description
The RMLV0816BGSB is a family of 8-Mbit static RAMs organized 524,288-word × 16-bit, fabricated by Renesas’s
high-performance Advanced LPSRAM technologies. The RMLV0816BGSB has realized higher density, higher
performance and low power consumption. The RMLV0816BGSB offers low power standby power dissipation;
therefore, it is suitable for battery backup systems. It is offered in 44pin TSOP (II).
Features
Single 3V supply: 2.4V to 3.6V
Access time:
── Power supply voltage from 2.7V to 3.6V: 45ns (max.)
── Power supply voltage from 2.4V to 2.7V: 55ns (max.)
Current consumption:
── Standby: 0.45µA (typ.)
Equal access and cycle times
Common data input and output
── Three state output
Directly TTL compatible
── All inputs and outputs
Battery backup operation
Part Name Information
Part Name Power supply Access time
Temperature
Range
Package
RMLV0816BGSB-4S2
2.7V to 3.6V 45 ns
-40 ~ +85°C 11.76mm×18.41mm 44pin plastic TSOP(II)
2.4V to 2.7V 55 ns
R10DS0231EJ0200
Rev.2.00
2015.06.26
