RMLV0816BGSB-4S2#AA0

RMLV0816BGSB - 4S2
R10DS0231EJ0200 Rev.2.00 Page 7 of
12
2015.06.26
Timing Waveforms
Read Cycle
Note 14. t
CHZ
, t
BHZ
and t
OHZ
are defined as the time when the DQ pins enter a high-impedance state and are not
referred to the DQ levels.
15. This parameter is sampled and not 100% tested
16. At any given temperature and voltage condition, t
CHZ
max is less than t
CLZ
min, t
BHZ
max is less than t
BLZ
min,
and t
OHZ
max is less than t
OLZ
min, for any device.
t
AA
CS#
A
0~18
t
OH
t
CLZ
t
ACS
t
OE
t
OLZ
t
CHZ
OE#
WE#
DQ
0~15
V
IH
t
OHZ
WE# = “H” level
t
RC
t
BLZ
t
BHZ
LB#,UB#
t
BA
High impedance
Valid Data
*15,16
*15,16
*15,16
*14,15,16
*14,15,16
*14,15,16
Valid address
RMLV0816BGSB - 4S2
R10DS0231EJ0200 Rev.2.00 Page 8 of
12
2015.06.26
Write Cycle (1) (WE# CLOCK, OE#=”H” while writing)
Note 17. t
WP
is the interval between write start and write end.
A write starts when all of (CS#), (WE#) and (one or both of LB# and UB#) become active.
A write is performed during the overlap of a low CS#, a low WE# and a low LB# or a low UB#.
A write ends when any of (CS#), (WE#) or (one or both of LB# and UB#) becomes inactive.
18. t
OHZ
and t
WHZ
are defined as the time when the DQ pins enter a high-impedance state and are not referred to
the DQ levels.
19. This parameter is sampled and not 100% tested
20. During this period, DQ pins are in the output state so input signals must not be applied to the DQ pins.
CS#
A
0~18
t
CW
t
WHZ
OE#
WE#
DQ
0~15
t
DH
t
WC
LB#,UB#
t
BW
Valid address
t
WR
t
AW
t
AS
t
WP
t
DW
*17
*18,19
*18,19
t
OHZ
Valid Data
*20
RMLV0816BGSB - 4S2
R10DS0231EJ0200 Rev.2.00 Page 9 of
12
2015.06.26
Write Cycle (2) (WE# CLOCK, OE# Low Fixed)
Note 21. t
WP
is the interval between write start and write end.
A write starts when all of (CS#), (WE#) and (one or both of LB# and UB#) become active.
A write is performed during the overlap of a low CS#, a low WE# and a low LB# or a low UB#.
A write ends when any of (CS#), (WE#) or (one or both of LB# and UB#) becomes inactive.
22. t
WHZ
is defined as the time when the DQ pins enter a high-impedance state and are not referred to the DQ
levels.
23. This parameter is sampled and not 100% tested.
24. During this period, DQ pins are in the output state so input signals must not be applied to the DQ pins.
CS#
A
0~18
t
CW
t
WHZ
OE#
WE#
DQ
0~15
t
DH
t
WC
LB#,UB#
t
BW
Valid address
t
WR
t
AW
t
AS
t
WP
t
DW
t
OW
*21
*22,23
Valid Data
V
IL
OE# = “L” level
*24
*24

RMLV0816BGSB-4S2#AA0

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
SRAM 8Mb 3V Adv.SRAM x16 TSOP44, 45ns, WTR
Lifecycle:
New from this manufacturer.
Delivery:
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