Data Sheet 1 2004-02-03
EDGE EVM Performance
EVM and Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 0.18 A, f = 1989.8 MHz
0
1
2
3
4
25 30 35 40
Output Power (dBm)
EVM RMS (Average %)x
0
10
20
30
40
Efficiency (%)
PTF180101
Features
• Typical EDGE performance
- Average output power = 4.0 W
- Gain = 19.0 dB
- Efficiency = 28%
- EVM = 1.1 %
• Typical WCDMA performance
- Average output power = 1.8 W
- Gain = 18.0 dB
- Efficiency = 20%
- ACPR = –45 dBc
• Typical CW performance
- Output power at P–1dB = 15 W
- Efficiency = 50%
• Integrated ESD protection:
Human Body Model Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
RF Characteristics, EDGE Operation at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 180 mA, P
OUT
= 4 W, f = 1989.8 MHz
Characteristic Symbol Min Typ Max Units
Error Vector Magnitude EVM (RMS) — 1.1 — %
Modulation Spectrum @ 400 kHz ACPR — –60 — dBc
Modulation Spectrum @ 600 kHz ACPR — –70 — dBc
Gain G
ps
— 19 — dB
Drain Efficiency η
D
— 28 — %
Two–Tone Measurements (tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 180 mA, P
OUT
= 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Units
Gain G
ps
18 19 — dB
Drain Efficiency η
D
30 33 — %
Intermodulation Distortion IMD — –30 –28 dBc
LDMOS RF Power Field Effect Transistor
10 W, 1805–1880 MHz, 1930–1990 MHz
10 W, 2110–2170 MHz
Description
The PTF180101 is a 10 W, internally–matched GOLDMOS FET device in-
tended for EDGE applications in the DCS/PCS band. Full gold metallization
ensures excellent device lifetime and reliability.
ESD: Electrostatic discharge sensitive device — observe handling precautions!
PTF180101S
Package 32259
