PTF180101S V1 Datasheet PTF180101S V1 | P7-P9

Data Sheet 7 2004-02-03

PTF180101

Microstrip Electrical Characteristics at 1990 MHz Dimensions: L x W (mm) Dimensions: L x W (in.)

l1 0.133 λ, 50 Ω 10.92 x 1.37 0.430 x 0.054

l2 0.096 λ, 50 Ω 7.87 x 1.37 0.310 x 0.054

l3 0.155 λ, 9.5 Ω 11.30 x 12.45 0.445 x 0.490

l4 0.008 λ, 12.8 Ω 0.64 x 8.86 0.025 x 0.349

l5 0.286 λ, 70 Ω 23.88 x 0.71 0.940 x 0.028

l6 0.247 λ, 12.8 Ω 18.29 x 8.86 0.720 x 0.349

l7 0.145 λ, 50 Ω 11.81 x 1.37 0.465 x 0.054

l8 0.008 λ, 50 Ω 0.64 x 1.37 0.025 x 0.054

Reference Circuits

Circuit Assembly Information

DUT PTF180101 LDMOS Transistor

Circuit Board 0.76 mm [.030”] thick, ε

= 4.5 Rogers TMM4, 2 oz. Copper

Reference Circuit Schematic

180101_sch

RF_IN

DUT

C5 C6

RF_OUT

DDV

l1 l2 l3

l6 l7 l8

Data Sheet 8 2004-02-03

PTF180101

Reference circuit assembly diagramt

(not to scale)

Gerber files for this circuit are available upon request.

1930–1990 MHz Operation

Component Description Manufacturer P/N or Comment

C1, C3, C5, C8 Capacitor, 10 pF ATC 100B 100

C2 Capacitor, 1.7 pF ATC 100B 1R7

C4 Capacitor, 2.0 pF ATC 100A 2R0

C6 Capacitor, 0.1 µF, 50 V Digi-Key P4525-ND

C7 Capacitor, 100 µF, 50 V Digi-Key P5182-ND

C9 Capacitor, 0.6 pF ATC 100A 0R6

R1, R2, R3 Resistor, 220 ohm, 1/4 W Digi-Key 220QBK

2.11–2.17 GHz Operation

Component Description Manufacturer P/N or Comment

C1, C3, C5, C8 Capacitor, 10 pF ATC 100B 100

C2 Capacitor, 0.8 pF ATC 100B 0R8

C4 Capacitor, 2.2 pF ATC 100A 2R2

C6 Capacitor, 0.1 µF, 50 V Digi-Key P4525-ND

C7 Capacitor, 100 µF, 50 V Digi-Key P5182-ND

C9 Capacitor, 1.0 pF ATC 100A 1R0

R1, R2, R3 Resistor, 220 ohm, 1/4 W Digi-Key 220QBK

Reference Circuits (cont.)

Data Sheet 9 2004-02-03

PTF180101

Ordering Information

Type Package Outline Package Description Marking

PTF180101S 32259 Thermally enhanced, surface mount PTF180101S

Notes: Unless otherwise specified

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. Pins: D = drain, S = source, G = gate

4. Lead thickness: 0.21 ± 0.03 [.008 ± .001]

Package Outline Specifications

Package 32259

2X 3.30

[.130]

1.02 [0.040]

0.51 [0.020]

2X 0.20±0.03

[.008±.001]

4X R0.25

[R.010]

MAX.

0°-7°

DRAFT ANGLE

10.16±0.25

[.400±.010]

6.86

[.270]

2X 1.65±0.51

[.065±.020]

2X 1.27

[.050]

2X 3.30

[.130]

4X 0.51

[.020]

4X 0.25 MAX

[.010]

6.35

[.250] SQ

6.86

[.270]

6.48

[.255] SQ

0.74±0.05

[.028±.002]

1.78

[.070]

2.99 ±0.38

[1.14 ±.010]

H-32259-2-1-2307

LEAD COPLANARITY

BOTTOM OF LEAD

TO BOTTOM OF PACKAGE

.000±.002 (TYP)

60° X 6.60

[60° X .260]

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http://www.infineon.com/products

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PTF180101S V1

Mfr. #:

Buy PTF180101S V1

Manufacturer:

Infineon Technologies

Description:

RF MOSFET Transistors Hi Pwr RF LDMOS FET 10W 1805-1880 MHz

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New from this manufacturer.

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PTF180101S V1