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PTF180101S V1

P1-P3P4-P6P7-P9P10-P10
Data Sheet 4 2004-02-03
PTF180101
Broadband Test Fixture Performance
V
DD
= 28 V, I
DQ
= 0.18 A, P
OUT
= 4 W
0
5
10
15
20
25
30
1900 1930 1960 1990 2020
Frequency (MHz)
Gain (dB), Efficiency (%)
-40
-30
-20
-10
0
10
20
Return Loss (dB)
Gain
Return Loss
Efficiency
Output Power vs. Supply Voltage
I
DQ
= 0.18 A, f = 1990 MHz
37
38
39
40
41
42
22 24 26 28 30 32
Supply Voltage (V)
Output Power (dBm)
Typical Performance (cont.)
Power Gain vs. Output Power
V
DD
= 28 V, f = 1990 MHz
18
19
20
21
0 1 10 100
Output Power (W)
Power Gain (dB)
I
DQ
= 0.135 mA
I
DQ
= 0.180 mA
I
DQ
= 0.235 mA
Broadband Test Fixture Performance
V
DD
= 28 V, I
DQ
= 0.18 A, P
OUT
= 10 W
0
10
20
30
40
50
1900 1930 1960 1990 2020
Frequency (MHz)
Gain (dB), Efficiency (%)
-35
-25
-15
-5
5
15
Return Loss (dB)
Gain
Return Loss
Efficiency
Data Sheet 5 2004-02-03
PTF180101
Typical Performance (cont.)
Two–Tone Drive–up
V
DD
= 28V, I
DQ
= 135 mA, f = 2170 MHz,
tone spacing = 1 MHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
20 25 30 35 40 45
Output Power (dBm), PEP
Intermodulation
Distortion (dBc)
0
5
10
15
20
25
30
35
40
Drain Efficiency (%)
IM3
Efficiency
Single–Carrier WCDMA Drive–Up
V
DD
= 28 V, I
DQ
= 135 mA, f = 2170 MHz,
3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67%
clipping, P/A R = 8.7 dB, 3.84 MHz bandwidth
-60
-55
-50
-45
-40
-35
17 22 27 32 37
Average Output Power (dBm)
Adjacent Channel
Power Ratio (dBc)
0
5
10
15
20
25
Drain Efficiency (%)
ACPR
Efficiency
-80
-70
-60
-50
-40
-30
-20
30 32 34 36 38 40 42
Output Power, PEP (dBm)
IMD (dBc)
Intermodulation Distortion vs. Output Power
V
DD
= 28 V, I
DQ
= 0.18 A, f
1
= 1990 MHz, f
2
= 1991 MHz
3rd Order
7th
5th
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
1.04
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage
0.05 A
0.28 A
0.51 A
0.74 A
0.97 A
1.20 A
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Typical Performance, WCDMA Operation
Series show current.
Data Sheet 6 2004-02-03
PTF180101
0.1
0.2
0
.
1
0
.
1
D
G
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
-
0
.
0
2020 MHz
2020 MHz
1920 MHz
1920 MHz
Z Load
Z Source
Z Source Z Load
G
S
D
Z
0
= 50 Ω
Broadband Circuit Impedance Data
Frequency Z Source Ω Z Load Ω
MHz R jX R jX
1920 7.3 -2.3 4.6 2.4
1930 8.1 -2.2 4.6 2.5
1960 8.3 -2.6 4.5 2.6
1990 6.5 -4.1 4.5 2.5
2000 6.3 -4.0 4.5 2.5
2020 6.2 -3.7 4.6 2.5
P1-P3P4-P6P7-P9P10-P10

PTF180101S V1

Mfr. #:
Buy PTF180101S V1
Manufacturer:
Infineon Technologies
Description:
RF MOSFET Transistors Hi Pwr RF LDMOS FET 10W 1805-1880 MHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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