155Mbps to 2.5Gbps Burst-Mode Laser Driver
2 Maxim Integrated
MAX3643
ABSOLUTE MAXIMUM RATINGS
OPERATING CONDITIONS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Supply Voltage V
CC
..............................................-0.5V to +4.0V
Current into BIAS-, BIAS+, OUT-, OUT+ .......-20mA to +150mA
Voltage at VMSET, VBSET, IN+, IN-, BEN+, BEN-, EN, MDIN,
MDOUT, BENOUT, BCMON ...................-0.5V to (V
CC
+ 0.5V)
Voltage at MODSET, BIASSET, VREF, IMAX ........-0.5V to +3.0V
Voltage at OUT-, OUT+, BIAS-, BIAS+ .....+0.3V to (V
CC
+ 0.5V)
Continuous Power Dissipation (T
A
= +85°C)
24-Pin TQFN, Multilayer Board
(derate 27.8mW/°C above +85°C)............................1807mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range ............................-55°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow)
Lead(Pb)-free..............................................................+260°C
Containing lead(Pb) ....................................................+240°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Turn-On Time 10% to 90% 0.001 1000 ms
Ambient Temperature -40 +85 °C
Data Rate 2500 Mbps
Voltage at VMSET, VBSET 0 1.4 V
Voltage at BCMON 0 1.4 V
Voltage at MDIN 0 2.56 V
ELECTRICAL CHARACTERISTICS
(V
CC
= 3.0V to 3.6V, T
A
= -40°C to +85°C. Typical values are at V
CC
= 3.3V, T
A
= +25°C, I
BIAS
= 20mA, I
MOD
= 30mA, unless other-
wise noted.) (Note 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Current I
CC
Excluding laser bias and mode currents,
max at I
MOD
= 85mA, I
BIAS
= 70mA
32 51 mA
I/O SPECIFICATIONS
LVPECL Differential Input
V
IN
V
IN
= (V
IN+
) - (V
IN-
) 200 1600 mV
P-P
LVPECL Common-Mode Input
Voltage
V
CM
V
CC
-
1.49
V
CC
-
1.32
V
CC
-
V
IN
/ 4
V
LVCMOS Output High Voltage I
OH
= -100μA
V
CC
-
0.2
V
LVCMOS Output Low Voltage I
OL
= 100μA 0.2 V
BENOUT Propagation Dela y T
d
C
L
= 20pF, from BEN zero crossing to 67%
CMOS level
30 ns
LVCMOS Input Pullup
75 k
LVCMOS Input Current V
IN
= 0V or V
IN
= V
CC
50 μA
LVCMOS Input High Voltage 2.0 V
CC
V
LVCMOS Input Low Voltage 0.2 0.8 V
BIAS GENERATOR SPECIFICATIONS
Bias Current Range I
BIAS
V
BIAS+
, V
BIAS-
0.6V 1 70 mA
Bias Current, Burst Off I
BIAS, OFF
BEN = low or EN = high 5 50 μA
1mA I
BIAS
< 2mA, VBSET = VREF 88
2mA I
BIAS
< 10mA, VBSET = VREF 70 88 110
BIASSET Current Gain G
BIAS
10mA I
BIAS
< 70mA, VBSET = VREF 82.5 88 94.5
mA/mA
