IS61LV12816L-10LQI-TR

IS61LV12816L
10
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05
ISSI
®
WRITE CYCLE NO. 2
(1)
(WE Controlled, OE = HIGH during Write Cycle)
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
DATA UNDEFINED
LOW
t
WC
VALID ADDRESS
t
PWE1
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
UB_CEWR2.eps
DATA UNDEFINED
t
WC
VALID ADDRESS
LOW
LOW
t
PWE2
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
DIN
OE
DATAIN VALID
t
LZWE
t
SD
UB_CEWR3.eps
IS61LV12816L
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
11
Rev. F
10/27/05
ISSI
®
DATA UNDEFINED
t
WC
ADDRESS 1 ADDRESS 2
t
WC
HIGH-Z
t
PBW
WORD 1
LOW
WORD 2
UB_CEWR4.eps
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
t
PBW
DATA
IN
VALID
t
SD
t
HD
t
SA
t
HA
t
HA
WRITE CYCLE NO. 4
(LB, UB Controlled, Back-to-Back Write)
(1,3)
Notes:
1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The tSA, tHA, tSD, and tHD timing is
referenced to the rising or falling edge of the signal that terminates the Write.
2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.
3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.
IS61LV12816L
12
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05
ISSI
®
DATA RETENTION WAVEFORM (CE Controlled)
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter Test Condition Options Min. Typ.
(1)
Max. Unit
VDR VDD for Data Retention See Data Retention Waveform 2.0 3.6 V
I
DR Data Retention Current VDD = 2.0V, CE VDD – 0.2V Com. 0.7 3 mA
Ind. 4
tSDR Data Retention Setup Time See Data Retention Waveform 0 ns
tRDR Recovery Time See Data Retention Waveform tRC ——ns
Note 1:
Typical values are measured at V
DD
= 3.3V, T
A
= 25
O
C. Not 100% tested.
V
DD
CE VDD
- 0.2V
t
SDR tRDR
VDR
CE
GND
Data Retention Mode

IS61LV12816L-10LQI-TR

Mfr. #:
Manufacturer:
ISSI
Description:
SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v
Lifecycle:
New from this manufacturer.
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