IS61LV12816L-10LQI-TR

IS61LV12816L
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05
ISSI
®
OPERATING RANGE
Range Ambient Temperature VDD (8 nS)VDD (10 nS)
Commercial 0°C to +70°C 3.3V + 10%, -5% 3.3V + 10%
Industrial –40°C to +85°C 3.3V + 10%, -5% 3.3V + 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –4.0 mA 2.4 V
VOL Output LOW Voltage VDD = Min., IOL = 8.0 mA 0.4 V
VIH Input HIGH Voltage
(1)
2VDD + 0.3 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
ILI Input Leakage GND VIN VDD –1 1 µA
ILO Output Leakage GND VOUT VDD, Outputs Disabled 1 1 µA
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VDD Power Supply Voltage Relative to GND –0.5 to 4.0V V
VTERM Terminal Voltage with Respect to GND –0.5 to VDD + 0.5 V
TSTG Storage Temperature –65 to + 150 °C
PT Power Dissipation 1.0 W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
IS61LV12816L
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
5
Rev. F
10/27/05
ISSI
®
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8 ns -10 ns
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
I
CC VDD Operating VDD = Max., CE = VIL Com. 65 60 mA
Supply Current IOUT = 0 mA, f = Max. Ind. 70 65
typ.
(2)
—50 50
ISB1 TTL Standby VDD = Max., Com. 30 25 mA
Current VIN = VIH or VIL Ind. 35 30
(TTL Inputs) CE VIH, f = max
I
SB2 CMOS Standby VDD = Max., Com. 3 3 mA
Current CE VDD – 0.2V, Ind. 4 4 mA
(CMOS Inputs) VIN VDD – 0.2V, or typ.
(2)
700 700 µA
VIN 0.2V
, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD=3.3V, TA=25
o
C. Not 100% tested.
CAPACITANCE
(1)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 6 pF
COUT Input/Output Capacitance VOUT = 0V 8 pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
IS61LV12816L
6
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05
ISSI
®
AC TEST CONDITIONS
Parameter Unit
Input Pulse Level 0V to 3.0V
Input Rise and Fall Times 3 ns
Input and Output Timing 1.5V
and Reference Level
Output Load See Figures 1 and 2
AC TEST LOADS
Figure 1.
319
5 pF
Including
jig and
scope
353
OUTPUT
3.3V
Figure 2.
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-8 ns -10 ns
Symbol Parameter Min. Max Min. Max. Unit
tRC Read Cycle Time 8 10 ns
tAA Address Access Time 8 10 ns
tOHA Output Hold Time 3 3 ns
tACE CE Access Time 8 10 ns
tDOE OE Access Time 3.5 4 ns
tHZOE
(2)
OE to High-Z Output 3.5 4 ns
tLZOE
(2)
OE to Low-Z Output 0 0 ns
tHZCE
(2)
CE to High-Z Output 0 3.5 0 4 ns
tLZCE
(2)
CE to Low-Z Output 3.5 3 ns
tBA LB, UB Access Time 3.5 4 ns
tHZB
(2)
LB, UB to High-Z Output 0 3.5 0 4 ns
tLZB
(2)
LB, UB to Low-Z Output 0 0 ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to
3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Z
O
= 50
1.5V
50
OUTPUT
30 pF
Including
jig and
scope

IS61LV12816L-10LQI-TR

Mfr. #:
Manufacturer:
ISSI
Description:
SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union