Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
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use http://www.nexperia.com
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
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Kind regards,
Team Nexperia
D
F
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1
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1
0
D
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3
PMXB75UPE
20 V, P-channel Trench MOSFET
8 July 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance R
DSon
= 69 mΩ
Very low gate-source threshold voltage for portable applications V
GS(th)
= -0.68 V
3. Applications
High-side load switch and charging switch for portable devices
Power management in battery driven portables
LED driver
DC-to-DC converter
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage - - -20 V
V
GS
gate-source voltage
T
j
= 25 °C
-8 - 8 V
I
D
drain current V
GS
= -4.5 V; T
amb
= 25 °C [1] - - -2.9 A
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= -4.5 V; I
D
= -2.9 A; T
j
= 25 °C - 69 85
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm
2
.
NXP Semiconductors
PMXB75UPE
20 V, P-channel Trench MOSFET
PMXB75UPE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 8 July 2014 2 / 15
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 S source
3 D drain
4 D drain
DFN1010D-3 (SOT1215)
017aaa259
G
D
S
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMXB75UPE DFN1010D-3 DFN1010D-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm
SOT1215
7. Marking
Table 4. Marking codes
Type number Marking code
PMXB75UPE 00 01 00
MARKING CODE
(EXAMPLE)
PIN 1
INDICATION MARK
VENDOR CODE
YEAR DATE
CODE
READING
DIRECTION
READING EXAMPLE:
11
01
10
aaa-008041
MARK-FREE AREA
Fig. 1. DFN1010D-3 (SOT1215) binary marking code description

PMXB75UPEZ

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET 20 V, P-channel Trench MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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