PMXB75UPEZ Datasheet PMXB75UPEZ | P7-P9

NXP Semiconductors

PMXB75UPE

20 V, P-channel Trench MOSFET

Product data sheet 8 July 2014 6 / 15

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source

breakdown voltage

I

D

= -250 µA; V

GS

= 0 V; T

j

= 25 °C -20 - - V

V

GSth

gate-source threshold

voltage

I

D

= -250 µA; V

DS

= V

GS

; T

j

= 25 °C -0.4 -0.68 -1 V

I

DSS

drain leakage current V

DS

= -20 V; V

GS

= 0 V; T

j

= 25 °C - - -1 µA

V

GS

= -8 V; V

DS

= 0 V; T

j

= 25 °C - - -10 µA

V

GS

= 8 V; V

DS

= 0 V; T

j

= 25 °C - - 10 µA

V

GS

= -4.5 V; V

DS

= 0 V; T

j

= 25 °C - - -1 µA

I

GSS

gate leakage current

V

GS

= 4.5 V; V

DS

= 0 V; T

j

= 25 °C - - 1 µA

V

GS

= -4.5 V; I

D

= -2.9 A; T

j

= 25 °C - 69 85 mΩ

V

GS

= -4.5 V; I

D

= -2.9 A; T

j

= 150 °C - 99 122 mΩ

V

GS

= -2.5 V; I

D

= -2.6 A; T

j

= 25 °C - 86 110 mΩ

V

GS

= -1.8 V; I

D

= -0.4 A; T

j

= 25 °C - 130 200 mΩ

V

GS

= -1.5 V; I

D

= -50 mA; T

j

= 25 °C - 205 450 mΩ

R

DSon

drain-source on-state

resistance

V

GS

= -1.2 V; I

D

= -10 mA; T

j

= 25 °C - 950 - mΩ

g

fs

forward

transconductance

V

DS

= -10 V; I

D

= -2 A; T

j

= 25 °C - 8.4 - S

R

G

gate resistance f = 1 MHz - 11.3 - Ω

Dynamic characteristics

Q

G(tot)

total gate charge - 6.8 12 nC

Q

GS

gate-source charge - 0.9 - nC

Q

GD

gate-drain charge

V

DS

= -10 V; I

D

= -2.9 A; V

GS

= -4.5 V;

T

j

= 25 °C

- 2.1 - nC

C

iss

input capacitance - 608 - pF

C

oss

output capacitance - 75 - pF

C

rss

reverse transfer

capacitance

V

DS

= -10 V; f = 1 MHz; V

GS

= 0 V;

T

j

= 25 °C

- 64 - pF

t

d(on)

turn-on delay time - 6 - ns

t

r

rise time - 19 - ns

t

d(off)

turn-off delay time - 29 - ns

t

f

fall time

V

DS

= -10 V; I

D

= -2.9 A; V

GS

= -4.5 V;

R

G(ext)

= 6 Ω; T

j

= 25 °C

- 15 - ns

Source-drain diode

V

SD

source-drain voltage I

S

= -1 A; V

GS

= 0 V; T

j

= 25 °C - -0.7 -1.2 V

NXP Semiconductors

PMXB75UPE

20 V, P-channel Trench MOSFET

Product data sheet 8 July 2014 7 / 15

V

DS

(V)

0 -4-3-1 -2

aaa-010848

-4

-8

-12

I

D

(A)

0

V

GS

= -2.5 V

-4.5 V -3 V

-1.8 V

-1.2 V

-1.5 V

-2.2 V

T

j

= 25 °C

Fig. 7. Output characteristics: drain current as a

function of drain-source voltage; typical values

aaa-010849

V

GS

(V)

0 -1.2-0.8-0.4

-10

-4

-10

-5

-10

-3

I

D

(A)

-10

-6

min typ max

T

j

= 25 °C; V

DS

= -5 V

Fig. 8. Sub-threshold drain current as a function of

gate-source voltage

aaa-010850

I

D

(A)

0 -12-8-4

0.2

0.3

0.1

0.4

0.5

R

DSon

(Ω)

0

-1.5 V -1.8 V

-2.2 V

-3 V

V

GS

= -4.5 V

-2.5 V

T

j

= 25 °C

Fig. 9. Drain-source on-state resistance as a function

of drain current; typical values

V

GS

(V)

0 -5-4-2 -3-1

aaa-010851

0.2

0.3

0.1

0.4

0.5

R

DSon

(Ω)

0

T

j

= 150 °C

T

j

= 25 °C

I

D

= -2.9 A

Fig. 10. Drain-source on-state resistance as a function

of gate-source voltage; typical values

NXP Semiconductors

PMXB75UPE

20 V, P-channel Trench MOSFET

Product data sheet 8 July 2014 8 / 15

V

GS

(V)

0 -3-2-1

aaa-010852

-4

-8

-12

I

D

(A)

0

T

j

= 150 °C

T

j

= 25 °C

V

DS

> I

D

× R

DSon

Fig. 11. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

T

j

(°C)

-60 1801200 60

aaa-010853

1.0

0.5

1.5

2.0

a

0

Fig. 12. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

T

j

(°C)

-60 1801200 60

aaa-010854

-0.5

-1.0

-1.5

V

GS(th)

(V)

0

min

typ

max

I

D

= -0.25 mA; V

DS

= V

GS

Fig. 13. Gate-source threshold voltage as a function of

junction temperature

aaa-010855

V

DS

(V)

-10

-1

-10

2

-10-1

10

2

10

3

C

(pF)

10

C

iss

C

oss

C

rss

f = 1 MHz; V

GS

= 0 V

Fig. 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PMXB75UPEZ

PMXB75UPEZ

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