Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
PMXB75UPEZ
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
NXP Semiconductors
PMXB75UPE
20 V
, P-channel T
rench MOSFET
PMXB75UPE
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
8 July 2014
9 / 15
Q
G
(nC)
0
8
6
2
4
aaa-010856
-1.5
-3.0
-4.5
V
GS
(V)
0
I
D
= -2.9 A; V
DS
= -10 V; T
amb
= 25 °C
Fig. 15.
Gate-source voltage as a function of gate
charge; typical values
017aaa137
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
Fig. 16.
MOSFET transistor: Gate charge waveform
definitions
aaa-010857
V
SD
(V)
0
-1.2
-0.8
-0.4
-2
-3
-1
-4
-5
I
S
(A)
0
T
j
= 150 °C
T
j
= 25 °C
V
GS
= 0 V
Fig. 17.
Source current as a function of source-drain voltage; typical values
1
1.
T
est information
t
1
t
2
P
t
006aaa812
duty cycle δ
=
t
1
t
2
Fig. 18.
Duty cycle definition
NXP Semiconductors
PMXB75UPE
20 V
, P-channel T
rench MOSFET
PMXB75UPE
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
8 July 2014
10 / 15
12.
Package outline
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
SOT1215
sot1215_po
13-03-05
13-03-06
Unit
mm
min
nom
max
0.245
1.05
0.1
A
Dimensions (mm are the original dimensions)
Note
1. Dimension A is including plating thickness.
DFN1010D-3: plastic thermal enhanced ultra
thin small outline package; no leads;
3 terminals; body: 1.1 x 1.0 x 0.37 mm
SOT1215
A
1
b
0.22
b
1
D
E
1
e
e
1
0.20
0.225
0.25
0.275
0.17
0.195
L
1
0.16
0.24
0.40
0.37
0.34
0.04
0.325
0.275
1.15
0.30
0.25
scale
L
0
1 mm
0.87
0.95
D
1
E
0.95
1.05
0.75
0.19
1.10
0.90
1.00
b (2x)
e
pin 1
index area
solderable lead
end, protrusion
max. 0.02 mm (3x)
visible depend upon
used manufacturing
technology (2x)
visible depend upon
used manufacturing
technology (4x)
D
b
1
L
(2x)
E
1
D
1
E
A
1
A
L
1
e
1
1
2
3
Fig. 19.
Package outline DFN1010D-3 (SOT1215)
NXP Semiconductors
PMXB75UPE
20 V
, P-channel T
rench MOSFET
PMXB75UPE
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
8 July 2014
11 / 15
13.
Soldering
SOT1215
Footprint information for reflow soldering of DFN1010D-3 package
sot1215_fr
solder land
solder resist
solder land plus solder paste
occupied area
Dimensions in mm
Issue date
12-11-23
13-03-06
0.3
0.75
1.1
0.4
0.35 (2x)
0.45 (2x)
0.3
1.2
0.25 (2x)
0.5
0.4
0.5
1.4
1.5
0.3
0.3
0.4
0.5
1.3
0.4
0.4
0.5
1.3
Fig. 20.
Reflow soldering footprint for DFN1010D-3 (SOT1215)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
PMXB75UPEZ
Mfr. #:
Buy PMXB75UPEZ
Manufacturer:
Nexperia
Description:
MOSFET 20 V, P-channel Trench MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
PMXB75UPEZ
