OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NSVEMC2DXV5T1G

P1-P3P4-P6P7-P9P10-P11
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 7
1 Publication Order Number:
EMC2DXV5T1/D
EMC2DXV5T1G,
EMC3DXV5T1G,
EMC4DXV5T1G,
EMC5DXV5T1G
Dual Common
Base-Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMC2DXV5T1G series,
two complementary BRT devices are housed in the SOT−553 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, − minus sign for Q
1
(PNP) omitted)
Rating
Symbol Value Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current I
C
100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
45
Q1
Q2
R1
R1
R2
R2
312
http://onsemi.com
SOT−553
CASE 463B
1
5
Ux M G
G
Ux = Specific Device Code
x = C, 3, E, or 5
M = Date Code
G = Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
357 (Note 1)
2.9 (Note 1)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
R
q
JA
350 (Note 1) °C/W
BOTH JUNCTIONS HEATED
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
500 (Note 1)
4.0 (Note 1)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
R
q
JA
250 (Note 1) °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad
DEVICE ORDERING INFORMATION, MARKING AND RESISTOR VALUES
Transistor 1 − PNP Transistor 2 − NPN
Device Marking R1 (K) R2 (K) R1 (K) R2 (K) Package Shipping
†
EMC2DXV5T1G
UC 22 22 22 22
SOT−553
(Pb−Free)
4000 / Tape & Reel
NSVEMC2DXV5T1G*
UC 22 22 22 22 4000 / Tape & Reel
EMC3DXV5T1G
U3 10 10 10 10
4000 / Tape & Reel
EMC3DXV5T5G
8000 / Tape & Reel
EMC4DXV5T1G
UE 10 47 47 47 4000 / Tape & Reel
EMC5DXV5T1G
U5 4.7 10 47 47 4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
Figure 1. Derating Curve
250
200
150
100
50
0
-50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (°C)
P
D
, POWER DISSIPATION (MILLIWATTS)
R
q
JA
= 833°C/W
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0) I
CBO
− − 100 nAdc
Collector-Emitter Cutoff Current (V
CB
= 50 V, I
B
= 0) I
CEO
− − 500 nAdc
Emitter-Base Cutoff Current EMC2DXV5T1G
(V
EB
= 6.0 V, I
C
= 0) EMC3DXV5T1G
EMC4DXV5T1G
EMC5DXV5T1G
I
EBO
−
−
−
−
−
−
−
−
0.2
0.5
0.2
1.0
mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − − Vdc
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mA, I
B
= 0) V
(BR)CEO
50 − − Vdc
DC Current Gain EMC2DXV5T1G
(V
CE
= 10 V, I
C
= 5.0 mA) EMC3DXV5T1G
EMC4DXV5T1G
EMC5DXV5T1G
h
FE
60
35
80
20
100
60
140
35
−
−
−
−
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA) V
CE(SAT)
− − 0.25 Vdc
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2 Vdc
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − − Vdc
Input Resistor EMC2DXV5T1G
EMC3DXV5T1G, EMC4DXV5T1G
EMC5DXV5T1G
R1 15.4
7.0
3.3
22
10
4.7
28.6
13
6.1
kW
Resistor Ratio EMC2DXV5T1G
EMC3DXV5T1G
EMC4DXV5T1G
EMC5DXV5T1G
R1/R2 0.8
0.8
0.17
0.38
1.0
1.0
0.21
0.47
1.2
1.2
0.25
0.56
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0) I
CBO
− − 100 nAdc
Collector-Emitter Cutoff Current (V
CB
= 50 V, I
B
= 0) I
CEO
− − 500 nAdc
Emitter-Base Cutoff Current EMC2DXV5T1G
(V
EB
= 6.0 V, I
C
= 0) EMC3DXV5T1G
EMC4DXV5T1G, EMC5DXV5T1G
I
EBO
−
−
−
−
−
−
0.2
0.5
0.1
mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − − Vdc
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mA, I
B
= 0) V
(BR)CEO
50 − − Vdc
DC Current Gain EMC2DXV5T1G
(V
CE
= 10 V, I
C
= 5.0 mA) EMC3DXV5T1G
EMC4DXV5T1G, EMC5DXV5T1G
h
FE
60
35
80
100
60
140
−
−
−
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA) V
CE(SAT)
− − 0.25 Vdc
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2 Vdc
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − − Vdc
Input Resistor EMC2DXV5T1G
EMC3DXV5T1G
EMC4DXV5T1G, EMC5DXV5T1G
R1 15.4
7.0
33
22
10
47
28.6
13
61
kW
Resistor Ratio EMC2DXV5T1G
EMC3DXV5T1G
EMC4DXV5T1G, EMC5DXV5T1G
R1/R2 0.8
0.8
0.8
1.0
1.0
1.0
1.2
1.2
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
P1-P3P4-P6P7-P9P10-P11

NSVEMC2DXV5T1G

Mfr. #:
Buy NSVEMC2DXV5T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SSP COMMON BASE BRT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet