NSVEMC2DXV5T1G

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
http://onsemi.com
7
TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 NPN TRANSISTOR
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN
Figure 17. V
CE(sat)
versus I
C
Figure 18. DC Current Gain
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
25°C
-25°C
100
10
1 100
75°C 25°C
100
0
V
in
, INPUT VOLTAGE (V)
10
1
0.1
0.01
0.001
246810
T
A
=-25°C
0
I
C
, COLLECTOR CURRENT (mA)
100
T
A
=-25°C
75°C
10
1
0.1
10 20 30 40 50
25°C
Figure 21. Input Voltage versus Output
Current
0.001
T
A
=-25°C
75°C
25°C
0.01
0.1
1
40
I
C
, COLLECTOR CURRENT (mA)
0
20 50
50
0 10 203040
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (V)
C
ob
, CAPACITANCE (pF)
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
I
E
= 0 mA
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
V
CE(sat)
, COLLECTOR EMITTER SATURATION VOLTAGE (V)
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
http://onsemi.com
8
TYPICAL ELECTRICAL CHARACTERISTICS −EMC4DXV5T1 PNP TRANSISTOR
10
1
0.1
010 20 30 4050
100
10
1
0 246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8101520253035404550
V
R
, REVERSE BIAS VOLTAGE (V)
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 22. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
0 20406080
Figure 23. DC Current Gain
1 10 100
I
C
, COLLECTOR CURRENT (mA)
Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (V)
C
ob
, CAPACITANCE (pF)
Figure 26. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
T
A
=75°C
V
CE
= 10 V
180
160
140
120
100
80
60
40
20
0
2 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
LOAD
+12 V
Figure 27. Inexpensive, Unregulated Current Sourc
e
Typical Application
for PNP BRTs
25°C
I
C
/I
B
= 10
T
A
=-25°C
T
A
=75°C
25°C
-25°C
V
O
= 5 V
V
O
= 0.2 V
25°C
T
A
=-25°C
75°C
75°C
V
CE(sat)
, COLLECTOR EMITTER SATURATION VOLTAGE (V)
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
http://onsemi.com
9
TYPICAL ELECTRICAL CHARACTERISTICS − EMC5DXV5T1 PNP TRANSISTOR
25°C
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN
Figure 28. V
CE(sat)
versus I
C
Figure 29. DC Current Gain
Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
25°C
-25°C
100
1
1 1000
75°C
25°C
100
0
V
in
, INPUT VOLTAGE (V)
10
1
0.1
0.01
2468 12
T
A
=-25°C
T
A
=75°C
-25°C
0.01
0.1
1
40
I
C
, COLLECTOR CURRENT (mA)
0
20 50
010203040
12
6
4
2
0
V
R
, REVERSE BIAS VOLTAGE (V)
C
ob
, CAPACITANCE (pF)
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
I
E
= 0 mA
T
A
= 25°C
V
O
= 5 V
3010 60
100
10
10
8
15 25 35 455
SERIES 1
10
V
CE(sat)
, COLLECTOR EMITTER SATURATION VOLTAGE (V)

NSVEMC2DXV5T1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SSP COMMON BASE BRT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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