NSVEMC2DXV5T1G

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 PNP TRANSISTOR
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
1000
10
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
Figure 4. Output Capacitance
I
C
, COLLECTOR CURRENT (mA)
0
10 20 30
V
O
= 0.2 V
T
A
=-25°C
75°C
100
10
1
0.1
40 50
Figure 5. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001
0 1 2 3 4
V
in
, INPUT VOLTAGE (V)
5 6 7 8 9 10
Figure 6. Input Voltage versus Output Current
0.01
0.1
1
10
40
I
C
, COLLECTOR CURRENT (mA)
0 20 50
75°C
25°C
T
A
=-25°C
50
010 20 30 40
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (V)
C
ob
, CAPACITANCE (pF)
25°C
I
C
/I
B
= 10
25°C
-25°C
V
CE
= 10 V
T
A
=75°C
f = 1 MHz
l
E
= 0 mA
T
A
= 25°C
75°C
25°C
T
A
=-25°C
V
O
= 5 V
V
CE(sat)
, COLLECTOR EMITTER SATURATION VOLTAGE (V)
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 NPN TRANSISTOR
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN
Figure 7. V
CE(sat)
versus I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
T
A
=-25°C
75°C
25°C
40
50
Figure 8. DC Current Gain
Figure 9. Output Capacitance
1
0.1
0.01
0.001
020 40
50
I
C
, COLLECTOR CURRENT (mA)
1000
100
10
1 10 100
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
25°C
-25°C
T
A
=-25°C
25°C
Figure 10. Output Current versus Input Voltage
75°C
25°C
T
A
=-25°C
100
10
1
0.1
0.01
0.001
01 234
V
in
, INPUT VOLTAGE (V)
56 78 910
Figure 11. Input Voltage versus Output
Current
50
010203040
4
3
1
2
0
V
R
, REVERSE BIAS VOLTAGE (V)
C
ob
, CAPACITANCE (pF)
75°C
V
CE
= 10 V
f = 1 MHz
I
E
= 0 mA
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V
CE(sat)
, COLLECTOR EMITTER SATURATION VOLTAGE (V)
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
http://onsemi.com
6
TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 PNP TRANSISTOR
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN
Figure 12. V
CE(sat)
versus I
C
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOLTAGE (V)
T
A
=-25°C
25°C
1 2 3 4 5 6 7 8 9 10
Figure 13. DC Current Gain
Figure 14. Output Capacitance Figure 15. Output Current versus Input
Voltage
Figure 16. Input Voltage versus Output
Current
0.01
20
I
C
, COLLECTOR CURRENT (mA)
0.1
1
0 40
50
1000
1 10 100
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
-25°C
100
10
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
T
A
=-25°C
25°C
75°C
75°C
I
C
/I
B
= 10
50
010203040
4
3
1
2
V
R
, REVERSE BIAS VOLTAGE (V)
C
ob
, CAPACITANCE (pF)
0
T
A
=-25°C
25°C
75°C
25°C
V
CE
= 10 V
f = 1 MHz
l
E
= 0 mA
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
V
CE(sat)
, COLLECTOR EMITTER SATURATION VOLTAGE (V)

NSVEMC2DXV5T1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SSP COMMON BASE BRT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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