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BSC067N06LS3GATMA1
P1-P3
P4-P6
P7-P9
P10-P10
BSC067N
06LS3 G
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
)
I
D
=f(
T
C
);
V
GS
≥10 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
Z
thJC
=f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
1 µs
10 µs
100 µs
1 m
s
10 m
s
DC
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
I
D
[A]
V
DS
[V]
limited by on-state
resistance
single
pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-2
10
-1
10
0
10
1
Z
thJC
[K/W]
t
p
[s]
0
10
20
30
40
50
60
70
80
0
50
100
150
200
P
tot
[W]
T
C
[
°
C]
0
10
20
30
40
50
60
0
50
100
150
200
I
D
[A]
T
C
[
°
C]
Rev. 2.4
page 4
2013-09-18
BSC067N
06LS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(
V
DS
);
T
j
=25 °C
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)ma
x
g
fs
=f(
I
D
);
T
j
=25 °C
parameter:
T
j
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
6 V
10 V
0
2
4
6
8
10
12
14
16
18
20
0
40
80
120
160
200
R
DS(on)
[m
W
]
I
D
[A]
25
°C
150
°C
0
20
40
60
80
100
0
1
2
3
4
5
I
D
[A]
V
GS
[V]
0
50
100
150
0
40
80
120
160
g
fs
[S]
I
D
[A]
2.8 V
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
10 V
0
20
40
60
80
100
120
140
160
180
200
0
1
2
3
I
D
[A
]
V
DS
[V]
Rev. 2.4
page 5
2013-09-18
BSC067N
06LS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=50 A;
V
GS
=10 V
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=100 µA
11 Typ. capacitances
12 Forward characteristics of reverse diode
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
I
F
=f(
V
SD
)
parameter:
T
j
typ
max
0
1
2
3
4
5
6
7
8
9
10
11
12
-
60
-
20
20
60
100
140
180
R
DS(on)
[m
W
]
T
j
[
°
C]
35 µA
350
m
A
0
0.5
1
1.5
2
2.5
-
60
-
20
20
60
100
140
180
V
GS(th)
[V]
T
j
[
°
C]
Ciss
Coss
Crss
10
1
10
2
10
3
10
4
0
20
40
60
C
[pF]
V
DS
[V]
25
°C
150
°C
25
°C, max
150
°C, max
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
I
F
[A
]
V
SD
[V]
Rev. 2.4
page 6
2013-09-18
P1-P3
P4-P6
P7-P9
P10-P10
BSC067N06LS3GATMA1
Mfr. #:
Buy BSC067N06LS3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
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BSC067N06LS3GATMA1