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BSC067N06LS3GATMA1

P1-P3P4-P6P7-P9P10-P10
BSC067N06LS3 G
13 Avalanche characteristics 14 Typ. gate charge
I
AS
=f(t
AV
); R
GS
=25 W
V
GS
=f(Q
gate
); I
D
=50 A pulsed
parameter: T
j(start)
parameter: V
DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
=f(T
j
); I
D
=1 mA
40
50
60
70
-60 -20 20 60 100 140 180
V
BR(DSS)
[V]
T
j
[°C]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
1
10
100
0.1 1 10 100 1000
I
AV
[A]
t
AV
[µs]
12 V
30 V
48 V
0
2
4
6
8
10
12
0 10 20 30 40 50 60
V
GS
[V]
Q
gate
[nC]
Rev. 2.4 page 7 2013-09-18
BSC067N06LS3 G
Package Outline PG-TDSON-8-5
Rev. 2.4 page 8 2013-09-18
BSC067N06LS3 G
PG-TDSON-8-5
Footprint
Rev. 2.4 page 9 2013-09-18
P1-P3P4-P6P7-P9P10-P10

BSC067N06LS3GATMA1

Mfr. #:
Buy BSC067N06LS3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Delivery:
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