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MCP112T-315E/LB

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P32
MCP111/112
DS20001889F-page 4 2004-2016 Microchip Technology Inc.
FIGURE 1-1: Timing Diagram.
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(only MCP111), T
A
= -40°C to +125°C.
Parameters Symbol Min. Typ. Max. Units Conditions
V
DD
Detect to V
OUT
Inactive t
RPU
—90 —
µs Figure 1-1 and C
L
= 50 pF
(Note 1)
V
DD
Detect to V
OUT
Active t
RPD
—130 —
µs V
DD
ramped from V
TRIP(MAX)
+
250 mV down to V
TRIP(MIN)
–
250 mV, per Figure 1-1,
C
L
= 50 pF (Note 1)
V
OUT
Rise Time After V
OUT
Active t
RT
—5 —
µs For V
OUT
10% to 90% of final
value per Figure 1-1, C
L
= 50 pF
(Note 1)
Note 1: These parameters are for design guidance only and are not 100% tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(MCP111 only), T
A
= -40°C to +125°C.
Parameters Symbol Min. Typ. Max. Units Conditions
Temperature Ranges
Specified Temperature Range T
A
-40 — +85 °C MCP1XX-195
Specified Temperature Range T
A
-40 — +125 °C Except MCP1XX-195
Maximum Junction Temperature T
J
— — +150 °C
Storage Temperature Range T
A
-65 — +150 °C
Package Thermal Resistances
Thermal Resistance, 3L-SOT23
JA
—336 —°C/W
Thermal Resistance, 3L-SC-70
JA
—340 —°C/W
Thermal Resistance, 3L-TO-92
JA
— 131.9 — °C/W
Thermal Resistance, 3L-SOT-89
JA
—110 —°C/W
1V
1V
V
TRIP
V
DD
V
OUT
t
RPU
V
OH
t
RT
t
RPD
V
OL
2004-2016 Microchip Technology Inc. DS20001889F-page 5
MCP111/112
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k (only MCP111;
see Figure 4-1), T
A
= -40°C to +125°C.
FIGURE 2-1: I
DD
vs. Temperature
(MCP111-195).
FIGURE 2-2: I
DD
vs. Temperature
(MCP112-300).
FIGURE 2-3: I
DD
vs. Temperature
(MCP112-475).
FIGURE 2-4: I
DD
vs. V
DD
(MCP111-195).
FIGURE 2-5: I
DD
vs. V
DD
(MCP112-300).
FIGURE 2-6: I
DD
vs. V
DD
(MCP112-475).
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-40
-20
0
20
40
60
80
100
120
140
Temperature (°C)
I
DD
(uA)
1.7V
1.0V
2.1V
2.8V
4.0V
5.0V
5.5V
MCP111-195
0
0.2
0.4
0.6
0.8
1
1.2
-40
-20
0
20
40
60
80
100
120
140
Temperature (°C)
I
DD
(uA)
1.7V
1.0V
2.1V
2.8V
4.0V
5.0V
MCP112-300
5.5V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-40
-20
0
20
40
60
80
100
120
140
Temperature (°C)
I
DD
(uA)
1.7V
1.0V
2.1V
2.8V
4.0V
5.0V
5.5V
MCP112-475
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.0 2.0 3.0 4.0 5.0 6.0
V
DD
(V)
I
DD
(uA)
-40°C
+25°C
+85°C
+125°C
MCP111-195
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.02.03.04.05.06.0
V
DD
(V)
I
DD
(uA)
MCP112-300
-40°C
+25°C
+85°C
+125°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.0 2.0 3.0 4.0 5.0 6.0
V
DD
(V)
I
DD
(uA)
MCP112-475
-40°C
+25°C
+85°C
+125°C
MCP111/112
DS20001889F-page 6 2004-2016 Microchip Technology Inc.
Note: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k (only MCP111;
see Figure 4-1), T
A
= -40°C to +125°C.
FIGURE 2-7: V
TRIP
and V
HYST
vs.
Temperature (MCP111-195).
FIGURE 2-8: V
TRIP
and V
HYST
vs.
Temperature (MCP112-300).
FIGURE 2-9: V
TRIP
and V
HYST
vs.
Temperature (MCP112-475).
FIGURE 2-10: V
OL
vs. I
OL
(MCP111-195 @V
DD
= 1.7V).
FIGURE 2-11: V
OL
vs. I
OL
(MCP112-300 @V
DD
= 2.7V).
FIGURE 2-12: V
OL
vs. I
OL
(MCP112-475 @V
DD
= 4.4V).
1.895
1.900
1.905
1.910
1.915
1.920
1.925
1.930
1.935
1.940
1.945
1.950
-60 -10 40 90 140
Temperature (°C)
V
TRIP
(V)
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
Hyst (V)
V
TRIP
, V decreasing
V
TRIP
, V increasing
V
HYS
, Hysteresis
MCP111-195
max temp is
+85°C
2.900
2.920
2.940
2.960
2.980
3.000
3.020
3.040
-60 -10 40 90 140
Temperature (°C)
V
TRIP
(V)
0.082
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.098
0.100
Hyst (V)
MCP112-300
V
TRIP
, V decreasing
V
TRIP
, V increasing
V
HYS
, Hysteresis
4.580
4.600
4.620
4.640
4.660
4.680
4.700
4.720
4.740
4.760
4.780
4.800
-60 -20 20 60 100 140
Temperature (°C)
V
TRIP
(V)
0.100
0.110
0.120
0.130
0.140
0.150
0.160
0.170
0.180
Hyst (V)
MCP112-475
V
TRIP
, V decreasing
V
TRIP
, V increasing
V
HYS
, Hysteresis
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.00 0.25 0.50 0.75 1.00
I
OL
(mA)
V
OL
(V)
-40°C
+25°C
+85°C
+125°C
MCP111-195
V
DD
= 1.7V
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
0.080
0.00 0.25 0.50 0.75 1.00
I
OL
(mA)
V
OL
(V)
MCP112-300
V
DD
= 2.7V
-40°C
+25°C
+85°C
+125°C
0.000
0.010
0.020
0.030
0.040
0.050
0.00 0.25 0.50 0.75 1.00
I
OL
(mA)
V
OL
(V)
MCP112-475
V
DD
= 4.4V
-40°C
+25°C
+85°C
+125°C
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P32

MCP112T-315E/LB

Mfr. #:
Buy MCP112T-315E/LB
Manufacturer:
Microchip Technology
Description:
Supervisory Circuits 1uA Sup P-P Act Low
Lifecycle:
New from this manufacturer.
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