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SIC620ARCD-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
SiC620R, SiC620AR
www.vishay.com
Vishay Siliconix
S14-2189, Rev. A 03-Nov-14
1
Document Number: 63589
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
60 A VRPower
®
Integrated Power Stage
DESCRIPTION
The SiC620R and SiC620AR are integrated power stage
solutions optimized for synchronous buck applications to
offer high current, high efficiency, and high power density
performance. Packaged in Vishay’s proprietary
5 mm x 5 mm
MLP package, SiC620R and SiC620AR enables voltage
regulator designs to deliver up to 60 A continuous current
per phase.
The internal power MOSFETs utilizes Vishay’s
state-of-the-art Gen IV TrenchFET technology that delivers
industry benchmark performance to significantly reduce
switching and conduction losses.
The SiC620R and SiC620AR incorporates an advanced
MOSFET gate driver IC that features high current driving
capability, adaptive dead-time control, an integrated
bootstrap Schottky diode, a thermal warning (THWn) that
alerts the system of excessive junction temperature, and
zero current detect to improve light load efficiency. The
drivers are also compatible with a wide range of PWM
controllers and supports tri-state PWM, 3.3 V (SiC620AR) /
5 V (SiC620R) PWM logic.
FEATURES
• Thermally enhanced PowerPAK
®
MLP55-31L
double cooling package
• Vishay’s Gen IV MOSFET technology and a
low-side MOSFET with integrated Schottky
diode
• Delivers up to 60 A continuous current
• 95 % peak efficiency
• High frequency operation up to 1.5 MHz
• Power MOSFETs optimized for 12 V input stage
• 3.3 V (SiC620AR) / 5 V (SiC620R) PWM logic with tri-state
and hold-off
• Zero current detect control for light load efficiency
improvement
• Low PWM propagation delay (< 20 ns)
• Thermal monitor flag
• Under voltage lockout for V
CIN
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Multi-phase VRDs for CPU, GPU, and memory
TYPICAL APPLICATION DIAGRAM
Fig. 1 - SiC620R and SiC620AR Typical Application Diagram
PWM
controller
Gate
driver
5V V
IN
V
OUT
V
CIN
ZCD_EN#
DSBL#
PWM
THWn
V
DRV
G
H
V
IN
BOOT
V
SWH
P
GND
GL
C
GND
PHASE
SiC620R, SiC620AR
www.vishay.com
Vishay Siliconix
S14-2189, Rev. A 03-Nov-14
2
Document Number: 63589
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PINOUT CONFIGURATION
Fig. 2 - SiC620R and SiC620AR Pin Configuration
PIN CONFIGURATION
PIN NUMBER NAME FUNCTION
1PWMPWM control input
2 ZCD_EN# ZCD control. Active low
3V
CIN
Supply voltage for internal logic circuitry
4, 32 C
GND
Analog ground for the driver IC
5 BOOT High-side driver bootstrap voltage
6 GH High-side gate signal
7 PHASE Return path of high-side gate driver
8 to 11, 34 V
IN
Power stage input voltage. Drain of high-side MOSFET
12 to 15, 28, 35 P
GND
Power ground
16 to 26 V
SWH
Switch node of the power stage
27, 33 GL Low-side gate signal
29 V
DRV
Supply voltage for internal gate driver
30 THWn Thermal warning open drain output
31 DSBL# Disable pin. Active low
ORDERING INFORMATION
PART NUMBER PACKAGE MARKING CODE OPTION
SiC620RCD-T1-GE3 PowerPAK MLP55-31L SiC620R 5 V PWM optimized
SiC620ARCD-T1-GE3 PowerPAK MLP55-31L SiC620AR 3.3 V PWM optimized
SiC620RDB / SiC620ARDB Reference board
P
GND
C
GND
BOOT
PHASE
V
IN
P
GND
P
GND
P
GND
P
GND
V
IN
V
IN
V
IN
GH
GL
V
DRV
THWn
DSBL#
PWM
ZCD_EN#
V
CIN
Top view Bottom view
P
GND
C
GND
BOOT
PHASE
V
IN
P
GND
P
GND
P
GND
P
GND
V
IN
V
IN
V
IN
HG
GL
V
DRV
THWn
DSBL#
PWM
ZCD_EN#
V
CIN
35
PGND
34
VIN
32
CGND
GL
2
1
31 2930 28 27 26 25 24
4
3
6
5
8
7
1514131211109
2
1
4
3
6
5
8
7
15 14 13 12 11 10 9
24 25 26 27 28 29 30 31
V
SWH
23
V
SWH
V
SWH
V
SWH
V
SWH
V
SWH
V
SWH
33
GL
V
SWH
22
V
SWH
21
V
SWH
20
V
SWH
19
V
SWH
18
V
SWH
17
V
SWH
16
23 V
SWH
22 V
SWH
21 V
SWH
20 V
SWH
19 V
SWH
16 V
SWH
18 V
SWH
17 V
SWH
15
SiC620R, SiC620AR
www.vishay.com
Vishay Siliconix
S14-2189, Rev. A 03-Nov-14
3
Document Number: 63589
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
(1)
The specification values indicated “AC” is V
SWH
to P
GND
-8 V (< 20 ns, 10 μJ), min. and 30 V (< 50 ns), max.
(2)
The specification value indicates “AC voltage” is V
BOOT
to P
GND
, 38 V (< 50 ns) max.
(3)
The specification value indicates “AC voltage” is V
BOOT
to V
PHASE
, 8 V (< 20 ns) max.
(4)
Output current rated with testing evaluation board at T
A
= 25 °C with natural convection cooling. The rating is limited by the peak evaluation
board temperature, T
J
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL PARAMETER CONDITIONS LIMIT UNIT
Input Voltage V
IN
-0.3 to +25
V
Control Logic Supply Voltage V
CIN
-0.3 to +7
Drive Supply Voltage V
DRV
-0.3 to +7
Switch Node (DC voltage)
V
SWH
-0.3 to +25
Switch Node (AC voltage)
(1)
-7 to +30
BOOT Voltage (DC voltage)
V
BOOT
32
BOOT Voltage (AC voltage)
(2)
38
BOOT to PHASE (DC voltage)
V
BOOT-PHASE
-0.3 to +7
BOOT to PHASE (AC voltage)
(3)
-0.3 to +8
All Lo g i c I n p u ts an d O u t p uts
(PWM, DSBL#, and THWn)
-0.3 to V
CIN
+0.3
Output Current, I
OUT(AV)
(4)
f
S
= 300 kHz, V
IN
= 12 V, V
OUT
= 1.8 V 60
A
f
S
= 1 MHz, V
IN
= 12 V, V
OUT
= 1.8 V 50
Max. Operating Junction Temperature T
J
150
°CAmbient Temperature T
A
-40 to +125
Storage Temperature T
stg
-65 to +150
Electrostatic Discharge Protection
Human body model, JESD22-A114 3000
V
Charged device model, JESD22-C101 500
RECOMMENDED OPERATING RANGE
ELECTRICAL PARAMETER MINIMUM TYPICAL MAXIMUM UNIT
Input Voltage (V
IN
)4.5-18
V
Drive Supply Voltage (V
DRV
) 4.555.5
Control Logic Supply Voltage (V
CIN
) 4.555.5
Switch Node (V
SWH
, DC voltage) - - 18
BOOT to PHASE (V
BOOT-PHASE
, DC voltage) 4 4.5 5.5
Thermal Resistance from Junction to Ambient - 10.6 -
°C/W
Thermal Resistance from Junction to Case - 1.6 -
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

SIC620ARCD-T1-GE3

Mfr. #:
Buy SIC620ARCD-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
Gate Drivers 60A VRPwr PowerPak DRMos MLP55-31L
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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