SiC620R, SiC620AR
www.vishay.com
Vishay Siliconix
S14-2189, Rev. A 03-Nov-14
4
Document Number: 63589
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS
(DSBL# = ZCD_EN# = 5 V, V
IN
= 12 V, V
DRV
and V
CIN
= 5 V, T
A
= 25 °C)
PARAMETER SYMBOL TEST CONDITION
LIMITS
UNIT
MIN. TYP. MAX.
POWER SUPPLY
Control Logic Supply Current I
VCIN
V
DSBL#
= 0 V, no switching - 12 -
μAV
DSBL#
= 5 V, no switching, V
PWM
= FLOAT - 300 -
V
DSBL#
= 5 V, f
S
= 300 kHz, D = 0.1 - 380 -
Drive Supply Current I
VDRV
f
S
= 300 kHz, D = 0.1 - 15 25
mA
f
S
= 1 MHz, D = 0.1 - 50 -
V
DSBL#
= 0 V, no switching - 25 -
μA
V
DSBL#
= 5 V, no switching - 60 -
BOOTSTRAP SUPPLY
Bootstrap Diode Forward Voltage V
F
I
F
= 2 mA 0.4 V
PWM CONTROL INPUT (SiC620R)
Rising Threshold V
TH_PWM_R
3.4 3.8 4.2
V
Falling Threshold V
TH_PWM_F
0.72 0.9 1.2
Tri-state Voltage V
TRI
V
PWM
= FLOAT - 2.3 -
Tri-state Rising Threshold V
TRI_TH_R
0.9 1.15 1.38
Tri-state Falling Threshold V
TRI_TH_F
33.33.6
Tri-state Rising Threshold
Hysteresis
V
HYS_TRI_R
- 225 -
mV
Tri-state Falling Threshold
Hysteresis
V
HYS_TRI_F
- 325 -
PWM Input Current I
PWM
V
PWM
= 5 V - - 350
μA
V
PWM
= 0 V - - -350
PWM CONTROL INPUT (SiC620AR)
Rising Threshold V
TH_PWM_R
2.2 2.45 2.7
V
Falling Threshold V
TH_PWM_F
0.72 0.9 1.1
Tri-state Voltage V
TRI
V
PWM
= FLOAT - 1.8 -
Tri-state Rising Threshold V
TRI_TH_R
0.9 1.15 1.38
Tri-state Falling Threshold V
TRI_TH_F
1.95 2.2 2.45
Tri-state Rising Threshold
Hysteresis
V
HYS_TRI_R
- 250 -
mV
Tri-state Falling Threshold
Hysteresis
V
HYS_TRI_F
- 300 -
PWM Input Current I
PWM
V
PWM
= 3.3 V - - 225
μA
V
PWM
= 0 V - - -225
TIMING SPECIFICATIONS
Tri-State to GH/GL Rising
Propagation Delay
t
PD_TRI_R
No load, see fig. 4
-30-
ns
Tri-state Hold-Off Time t
TSHO
- 130 -
GH - Turn Off Propagation Delay t
PD_OFF_GH
-15-
GH - Turn On Propagation Delay
(Dead time rising)
t
PD_ON_GH
-10-
GL - Turn Off Propagation Delay t
PD_OFF_GL
-12-
GL - Turn On Propagation Delay
(Dead time falling)
t
PD_ON_GL
-10-
DSBL# Lo to GH/GL Falling
Propagation Delay
t
PD_DSBL#_F
Fig. 5 - 15 -
PWM Minimum On-Time t
PWM_ON_MIN
30 - -
SiC620R, SiC620AR
www.vishay.com
Vishay Siliconix
S14-2189, Rev. A 03-Nov-14
5
Document Number: 63589
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Typical limits are established by characterization and are not production tested.
(2)
Guaranteed by design.
DETAILED OPERATIONAL DESCRIPTION
PWM Input with Tri-state Function
The PWM input receives the PWM control signal from the VR
controller IC. The PWM input is designed to be compatible
with standard controllers using two state logic (H and L) and
advanced controllers that incorporate tri-state logic (H, L
and tri-state) on the PWM output. For two state logic, the
PWM input operates as follows. When PWM is driven above
V
PWM_TH_R
the low-side is turned on and the high-side is
turned on. When PWM input is driven below V
PWM_TH_F
the
high-side is turned OFF and the low-side is turned ON. For
tri-state logic, the PWM input operates as previously stated
for driving the MOSFETs. However, there is an third state
that is entered as the PWM output of tri-state compatible
controller enters its high impedance state during shut-down.
The high impedance state of the controller’s PWM output
allows the SiC620R and SiC620AR to pull the PWM input
into the tri-state region (see PWM Timing Diagram). If the
PWM input stays in this region for the tri-state hold-off
period, t
TSHO
, both high-side and low-side MOSFETs are
turned OFF. This function allows the VR phase to be
disabled without negative output voltage swing caused by
inductor ringing and saves a Schottky diode clamp. The
PWM and tri-state regions are separated by hysteresis to
prevent false triggering. The SiC620AR incorporates PWM
voltage thresholds that are compatible with 3.3 V logic and
the SiC620R thresholds are compatible with 5 V logic.
Disable (DSBL#)
In the low state, the DSBL# pin shuts down the driver IC and
disables both high-side and low-side MOSFETs. In this
state, standby current is minimized. If DSBL# is left
unconnected, an internal pull-down resistor will pull the pin
to C
GND
and shut down the IC.
Diode Emulation Mode (ZCD_EN#)
When ZCD_EN# pin is logic Low and PWM signal switches
Low, GL is forced on (after normal BBM time). During this
time, it is under control of the ZCD (zero crossing detect)
comparator. If, after the internal blanking delay, the inductor
current becomes zero, the low-side is turned off. This
improves light load efficiency by avoiding discharge of
output capacitors. If PWM enters tri-state, then device will
go into normal tri-state mode after tri-state delay. The GL
output will be turned off regardless of Inductor current, this
is an alternative method of improving light load efficiency by
reducing switching losses.
Thermal Shutdown Warning (THWn)
The THWn pin is an open drain signal that flags the presence
of excessive junction temperature. Connect with a
maximum of 20 kΩ, to V
CIN
. An internal temperature sensor
detects the junction temperature. The temperature
threshold is 160 °C. When this junction temperature is
exceeded the THWn flag is set. When the junction
temperature drops below 135 °C the device will clear the
THWn signal. The SiC620R and SiC620AR do not stop
operation when the flag is set. The decision to shutdown
must be made by an external thermal control function.
Voltage Input (V
IN
)
This is the power input to the drain of the high-side power
MOSFET. This pin is connected to the high power
intermediate BUS rail.
DSBL# ZCD_EN# INPUT
DSBL# Logic Input Voltage
V
IH_DSBL#
Input logic high 2 - -
V
V
IL_DSBL#
Input logic low - - 0.8
ZCD_EN# Logic Input Voltage
V
IH_ZCD_EN#
Input logic high 2 - -
V
IL_ZCD_EN#
Input logic low - - 0.8
PROTECTION
Under Voltage Lockout V
UVLO
V
CIN
rising, on threshold - 3.7 4.1
V
V
CIN
falling, off threshold 2.7 3.1 -
Under Voltage Lockout Hysteresis V
UVLO_HYST
- 575 - mV
THWn Flag Set
(2)
T
THWn_SET
- 160 -
°CTHWn Flag Clear
(2)
T
THWn_CLEAR
- 135 -
THWn Flag Hysteresis
(2)
T
THWn_HYST
-25-
THWn Output Low V
OL_THWn
I
THWn
= 2 mA - 0.02 - V
ELECTRICAL SPECIFICATIONS
(DSBL# = ZCD_EN# = 5 V, V
IN
= 12 V, V
DRV
and V
CIN
= 5 V, T
A
= 25 °C)
PARAMETER SYMBOL TEST CONDITION
LIMITS
UNIT
MIN. TYP. MAX.
SiC620R, SiC620AR
www.vishay.com
Vishay Siliconix
S14-2189, Rev. A 03-Nov-14
6
Document Number: 63589
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Switch Node (V
SWH
and PHASE)
The switch node, V
SWH
, is the circuit power stage output.
This is the output applied to the power inductor and output
filter to deliver the output for the buck converter. The PHASE
pin is internally connected to the switch node V
SWH
. This pin
is to be used exclusively as the return pin for the BOOT
capacitor. A 20 kΩ resistor is connected between GH and
PHASE to provide a discharge path for the HS MOSFET in
the event that V
CIN
goes to zero while V
IN
is still applied.
Ground Connections (C
GND
and P
GND
)
P
GND
(power ground) should be externally connected
to C
GND
(control signal ground). The layout of the printed
circuit board should be such that the inductance separating
C
GND
and P
GND
is minimized. Transient differences due to
inductance effects between these two pins should not
exceed 0.5 V
Control and Drive Supply Voltage Input (V
DRV
, V
CIN
)
V
CIN
is the bias supply for the gate drive control IC. V
DRV
is
the bias supply for the gate drivers. It is recommended to
separate these pins through a resistor. This creates a low
pass filtering effect to avoid coupling of high frequency gate
drive noise into the IC.
Bootstrap Circuit (BOOT)
The internal bootstrap diode and an external bootstrap
capacitor form a charge pump that supplies voltage to the
BOOT pin. An integrated bootstrap diode is incorporated so
that only an external capacitor is necessary to complete the
bootstrap circuit. Connect a boot strap capacitor with one
leg tied to BOOT pin and the other tied to PHASE pin.
Shoot-Through Protection and Adaptive Dead Time
The SiC620R and SiC620AR have an internal adaptive logic
to avoid shoot through and optimize dead time. The shoot
through protection ensures that both high-side and low-side
MOSFETs are not turned ON at the same time. The adaptive
dead time control operates as follows. The HS and LS gate
voltages are monitored to prevent the one turning ON from
tuning ON until the other's gate voltage is sufficiently low
(< 1 V). Built in delays also ensure that one power MOS is
completely OFF, before the other can be turned ON. This
feature helps to adjust dead time as gate transitions change
with respect to output current and temperature. Change
with respect to output current and temperature.
Under Voltage Lockout (UVLO)
During the start up cycle, the UVLO disables the gate
drive holding high-side and low-side MOSFET gates low
until the supply voltage rail has reached a point at which
the logic circuitry can be safely activated. The SiC620R,
SiC620AR also incorporates logic to clamp the gate drive
signals to zero when the UVLO falling edge triggers the
shutdown of the device. As an added precaution, a 20 kΩ
resistor is connected between GH and PHASE to provide a
discharge path for the HS MOSFET.
FUNCTIONAL BLOCK DIAGRAM
Fig. 3 - SiC620R and SiC620AR Functional Block Diagram
DISB#
20K
V
SWH
V
SWH
GL
+
-
GL
+
-
ZCD_EN#
Thermal monitor
& warning
UVLO
V
CIN
PWM logic
control &
state
machine
Anti-cross
conduction
control
logic
BOOT
THWn
V
IN
GH
PWM
C
GND
V
CIN
V
ref
= 1 V
V
ref
= 1 V
P
GND
PHASE
V
DRV
V
DRV
P
GND

SIC620ARCD-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Gate Drivers 60A VRPwr PowerPak DRMos MLP55-31L
Lifecycle:
New from this manufacturer.
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