DS1558
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D CR ON
S1 s n, year 2000-compliant (Y2KC), real-time clock/calendar with an RTC
alarm, watchdog timer, power-on reset, battery monitor, and NV SRAM controller. User access to all
registers within the DS1558 is accomplished with a byte-wide interface as shown in Figure 1. The RTC
registers contain century, year, month, date, day, hours, minutes, and seconds data in 24-hour BCD
fo at. Corrections for day of month and leap year are made automatically.
The DS1558 maps the RTC registers into the SRAM address space and constantly monitors A0–A18.
W n any the
ES IPTI
The D 558 i a full-functio
rm
he of upper 16 address locations are accessed, the DS1558 inhibits CER and OER to the
S M, an dir DS1558 can be used
w SRA up addresses. Smaller SRAMs can be used, provided that the unused upper
address lines on the DS1558 are connected to V
CC
.
The RTC registers are double-buffered into an internal and external set. The user has direct access to the
external set. Clock/calendar updates to the external set of registers can be disabled and enabled to allow
th ser to ess static data. Assuming the internal oscillator is turned on, the internal set of registers is
continuously updated; this occurs regardless of external register settings to guarantee that accurate RTC
in ation is always maintained.
The DS1558 has interrupt (
RA d re ects reads and writes to the RTC registers within the DS1558. The
to 524,272 ith Ms
e u acc
form
IRQ /FT) and reset ( RST ) outputs that can be used to control CPU activity.
The IRQ / ter terrupt when the RTC register values
m h use grammed alarm values. The interrupt is always available while the device is powered from
th ystem ply, and it can be programmed to occur when in the battery-backed state to serve as a
wake-up. The
FT in rupt output can be used to generate an external in
atc r-pro
e s sup
system IRQ /FT output can also be used as a CPU watchdog timer. CPU activity is
monitored and an interrupt or reset output are activated if the correct activity is not detected within
programm i ower-down or failure
and hold the CPU ; the
ed lim ts. The DS1558 power-on reset can be used to detect a system p
in a safe reset state until normal power returns and stabilizes RST output is used
for this function.
T DS155 also tects the data in the clock
and SRAM against out-of-tolerance V conditions by inhibiting the
he 8 contains its own power-fail circuitry, which automatically pro
CCI
CE input when the V
CC
supply
enters an out-of-tolerance condition. W
T
, the external battery is
s hed u ovides a high degree of
data security during unpredictable
CC
levels.
hen V
CCI
goes below the level of V
BA
pply energy to the clock and the external SRAM. This feature prwitc on to s
system operation brought on by low V
DS1558
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Figure 1. BLOCK DIAGRAM
ES
V
CC
Table 1. OPERATING MOD
CE OE WE
DQ0–DQ7 MODE POWER
V
IH
X X High-Z Deselect Standby
V
IL
X V
IL
D
IN
Write Active
V
IL
V
IL
V
IH
D
OUT
Read Active
V
CC
> V
PF
V
IL
V
IH
V
IH
High-Z Read Active
V
SO
< V
CC
< V
PF
X X X High-Z Deselect CMOS Standby
V
CC
< V
SO
< V
PF
X X X High-Z Data Retention Battery Current
DATA READ MODE
The DS1558 is in the read mode whenever CE is low and WE is high. The device architecture allows
gh access to any valid address location. Valid data is available at the DQ pins within t
AA
after
the last address input is stable, provided that
ripple-th
rou
CE
and
OE
access times are satisfied. If
CE
or
OE
access
et, valid data is available at the latter of chip-enable access (t
CEA
) or at output-enable
(t
OEA
). The state of the data input/output pins (DQ) is controlled by
tim
es are not m
access time
CE and OE . If the
ated before t
AA
, the data lines are driven to an intermediate state until t
AA
. If the address
inputs are changed while
outputs are activ
CE and OE remain valid, output data remains valid for output-data hold time
), but then goes indeterminate until the next address acces
s. (tOH
NOTE: ANY U S THE RTC.NUSED UPPER ADDRESS PINS MUST BE CONNECTED TO V
CC
TO PROPERLY ADDRES
DS1558
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DATA WRITE MODE
The DS1558 is in the write mode whenever
WE
and
CE
are in their active state. The
referenced to the latter occurring transition of
start of a write is
WE or CE . The addresses must be hel
the cycle.
d valid throughout
CE and WE must return inactive for a minimum of t prior to the initiation of a subsequent
read or write cycle. Data in must be valid t prior to the
WR
DS
end of the write and remain valid for t
DH
afterward. In a typical application, the
OE
signal is high during a write cycle. However,
OE
can be active
ten If provided that care is taken with the data bus to avoid bus con tion. OE is low prior to WE
ress inputs. A low transitioning low, the data bus can become active with read data defined by the add
transition on WE then disables the outputs t
WEZ
after WE goes active.
DATA RETENTION MODE
The 5V device is fully accessible and data can be written and read only when V
CC
i
However, when V
CC
is below the power-fail point V
PF
(point at which write prot
internal clock registers and SRAM are blocked from any access. When V falls below the batter
s greater than V
PF
.
ection occurs), the
CC
y switch
point V
SO
(battery supply level), device power is switched from the V
CC
pin to the backup battery. RTC
inal levels.
s greater than V
PF
.
he device power is
C
t . If V
PF
is greater
CC
drops
V
CC
is returned to
All control, data, and address signals must be powered down when V
CC
is powered down.
558 internal clock
current is less than
g. No external protection components
are required, and none should be used. The DS1558 has two battery pins that operate independently; the
DS1558 selects the higher of the two inputs. If only one battery is used, the battery should be attached to
V
BAT1
, and V
BAT2
should be grounded.
INTERNAL BATTERY MONITOR
The DS1558 constantly monitors the battery voltage of the internal battery. The battery-low flag (BLF)
bit of the flags register (B4 of 7FFF0h) is not writable and should always be a 0 when read. If a 1 is ever
present, both battery inputs are below 1.8V and both the contents of the RTC and RAM are questionable.
POWER-ON RESET
A temperature-compensated comparator circuit monitors the level of V
CC
. When V
CC
falls to the power-
fail trip point, the
operation and SRAM data are m
aintained from the battery until V
CC
is returned to nom
The 3.3V device is fully accessible and data can be written and read only when V
CC
i
When V
CC
falls below V
PF
, access to the device is inhibited. If V
PF
is less than V
SO
, t
switched from V
C
o the internal backup lithium battery when V
CC
drops below V
PF
than V
SO
, the device power is switched from V
CC
to the internal backup lithium battery when V
below V
SO
. RTC operation and SRAM data are maintained from the battery until
nominal levels.
BATTERY LONGIVITY
The battery lifetime is dependent on the RAM battery standby current and the DS1
oscillator current. The total battery current is I
OSC
+ I
CCO
. When V
CC
is above V
PF
, I
BAT
50nA. The DS1558 has an internal circuit to prevent battery chargin
RST signal (open drain) is pulled low. When V
CC
returns to nominal levels, the RST
signal continues to be pulled low for a period of 40ms to 200ms. The power-on reset function is
independent of the RTC oscillator and thus is operational whether or not the oscillator is enabled.

DS1558W-TRL

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Real Time Clock
Lifecycle:
New from this manufacturer.
Delivery:
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