November 2010 Doc ID 11096 Rev 5 1/12
12
STP40NF10
N-channel 100 V, 0.025 Ω, 50 A TO-220
low gate charge STripFET™ II Power MOSFET
Features
Exceptional dv/dt capability
Low gate charge
100% avalanche tested
Application
Switching applications
Description
This N-channel 100 V Power MOSFET is the
latest development of STMicroelectronics unique
"single feature size" strip-based process. The
resulting transistor shows extremely high packing
density for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
allowing remarkable manufacturing
reproducibility.
Figure 1. Internal schematic diagram
Order code V
DSS
R
DS(on)
max. I
D
STP40NF10 100 V < 0.028 Ω 50 A
TO-220
1
2
3
Table 1. Device summary
Order code Marking Package Packaging
STP40NF10 P40NF10@ TO-220 Tube
www.st.com
Contents STP40NF10
2/12 Doc ID 11096 Rev 5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STP40NF10 Electrical ratings
Doc ID 11096 Rev 5 3/12
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 100 V
V
GS
Gate- source voltage ±20 V
I
D
(1)
1. Limited by wire bonding
Drain current (continuous) at T
C
= 25 °C 50 A
I
D
Drain current (continuous) at T
C
= 100 °C 35 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 200 A
P
TOT
Total dissipation at T
C
= 25 °C 150 W
Derating factor 1 W/°C
dv/dt
(3)
3. I
SD
50 A, di/dt 600 A/µs, V
DD
V
(BR)DSS
, T
j
T
JMAX.
Peak diode recovery voltage slope 27 V/ns
E
AS
(4)
4. Starting T
j
= 25 °C, I
D
= 50 A, V
DD
=25 V
Single pulse avalanche energy 385 mJ
T
stg
Storage temperature
- 55 to 175 °C
T
j
Max. operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 1 °C/W
R
thj-a
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering purpose 300 °C

STP40NF10

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 100 Volt 50 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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