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STP40NF10
P1-P3
P4-P6
P7-P9
P10-P12
Electrical ch
aracteristics
STP40NF10
4/12
Doc ID 11096 Rev 5
2 Electrical
characteristics
(T
CASE
= 25 °C unless otherwise specified)
T
able 4.
On/off states
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown v
oltage
I
D
= 250 µA, V
GS
= 0
100
V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rat
ing
1
µA
V
DS
=Max rating,T
C
=125°C
10
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ±20 V
±100
nA
V
GS(th)
Gate threshold v
oltage
V
DS
= V
GS
, I
D
= 250 µA
2
3
4
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V
, I
D
= 25 A
0.025
0.028
Ω
T
able 5.
Dynamic
Symbol
P
arameter
T
est co
nditions
Min.
T
yp.
Max.
Unit
g
fs
(1)
1.
Pulsed: Pulse duration =
300 µs, duty cycle 1.5.
F
orward transconductance
V
DS
= 15 V
,
I
D
=28 A
-
22
S
C
iss
Input capacitance
V
DS
= 25 V
, f = 1 MHz,
V
GS
= 0
2180
pF
C
oss
Output capacitance
-
298
pF
C
rss
Re
vers
e transf
er
capacitance
83.7
pF
Q
g
T
otal g
ate charge
V
DD
= 50 V
, I
D
= 40 A,
V
GS
= 10V
(see Figure 15)
46.5
62
nC
Q
gs
Gate-source charge
-
13.3
nC
Q
gd
Gate-drain charge
17.5
22.5
nC
T
able 6.
Switchi
ng times
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
t
d(on)
t
r
T
urn-on delay time
Rise time
V
DD
= 50V
, I
D
= 25A
R
G
=4
.
7
Ω
V
GS
= 10V
(see Figure 14)
-
21
46
-
ns
ns
t
d(off)
t
f
T
urn-off-delay time
F
a
ll time
-
54
13
-
ns
ns
STP40NF10
Electrical character
istics
Doc ID 11096 Rev
5
5/12
T
able 7.
Sourc
e drain diode
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max
Unit
I
SD
Source-drain current
-
80
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
320
A
V
SD
(2)
2.
Pulsed: Pulse duration =
300 µs, duty cycle 1.5%
F
orward on voltage
I
SD
= 50A, V
GS
= 0
-
1.5
V
t
rr
Q
rr
I
RRM
Re
verse reco
very time
Rev
erse recovery charge
Re
verse reco
very current
I
SD
= 50A, V
DD
= 25V
di/dt = 100A/µs,
T
j
= 150°C
(see Figure 16)
-
80
250
6.4
ns
nC
A
Electrical ch
aracteristics
STP40NF10
6/12
Doc ID 11096 Rev 5
2.1 Electrical
characterist
ics (curves)
Figure 2.
Safe ope
rating area fo
r T
O-220
Figure 3.
Thermal impedance f
or TO-2
20
Figure 4.
Output charact
eristics
Figure 5.
T
r
ansfer characteristic
s
Figure 6.
T
ransconductance
Figure 7.
Static drain-sou
rce on resis
tance
P1-P3
P4-P6
P7-P9
P10-P12
STP40NF10
Mfr. #:
Buy STP40NF10
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 100 Volt 50 Amp
Lifecycle:
New from this manufacturer.
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STP40NF10