CY62148ESL MoBL
®
Document Number: 001-50045 Rev. *J Page 7 of 16
Switching Characteristics
Over the operating range
Parameter
[14, 15]
Description
55 ns (Industrial /
Automotive-A)
Unit
Min Max
Read Cycle
t
RC
Read cycle time 55 ns
t
AA
Address to data valid 55 ns
t
OHA
Data hold from address change 10 ns
t
ACE
CE LOW to data valid 55 ns
t
DOE
OE LOW to data valid 25 ns
t
LZOE
OE LOW to low Z
[16]
5 ns
t
HZOE
OE HIGH to high Z
[16, 17]
20 ns
t
LZCE
CE LOW to low Z
[16]
10 ns
t
HZCE
CE HIGH to high Z
[16, 17]
20 ns
t
PU
CE LOW to power-up 0 ns
t
PD
CE HIGH to power-up 55 ns
Write Cycle
[18, 19]
t
WC
Write cycle time 55 ns
t
SCE
CE LOW to write end 40 ns
t
AW
Address setup to write end 40 ns
t
HA
Address hold from write end 0 ns
t
SA
Address setup to write start 0 ns
t
PWE
WE pulse width 40 ns
t
SD
Data setup to write end 25 ns
t
HD
Data hold from write end 0 ns
t
HZWE
WE LOW to high Z
[16, 17]
20 ns
t
LZWE
WE HIGH to low Z
[16]
10 ns
Notes
14. In an earlier revision of this device, under a specific application condition, READ and WRITE operations were limited to switching of the chip enable signal as described
in the Application Note AN66311. However, the issue has been fixed and in production now, and hence, this Application Notes is no longer applicable. It is available
for download on our website as it contains information on the date code of the parts, beyond which the fix has been in production.
15. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1 V/ns), timing reference levels of V
CC(typ)
/2, input pulse
levels of 0 to V
CC(typ)
, and output loading of the specified I
OL
/I
OH
as shown in Figure 2 on page 5.
16. At any temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any device.
17. t
HZOE
, t
HZCE
, and t
HZWE
transitions are measured when the output enter a high impedance state.
18. The internal write time of the memory is defined by the overlap of WE
, CE = V
IL
. All signals must be ACTIVE to initiate a write and any of these signals can terminate
a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.
19. The minimum write cycle pulse width for Write Cycle No. 3 (WE
Controlled, OE LOW) should be equal to the sum of t
SD
and t
HZWE
.
CY62148ESL MoBL
®
Document Number: 001-50045 Rev. *J Page 8 of 16
Switching Waveforms
Figure 4. Read Cycle No. 1 (Address Transition Controlled)
[20, 21]
Figure 5. Read Cycle No. 2 (OE Controlled)
[21, 22]
PREVIOUS DATA VALID DATA
OUT
VALID
RC
t
AA
t
OHA
tRC
ADDRESS
DATA I/O
50%
50%
DATA
OUT
VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
HZCE
t
PD
IMPEDANCE
I
CC
I
SB
HIGH
ADDRESS
CE
DATA I/O
V
CC
SUPPLY
CURRENT
OE
Notes
20. Device is continuously selected. OE
, CE = V
IL
.
21. WE
is HIGH for read cycles.
22. Address valid before or similar to CE
transition LOW.
23. Data I/O is high impedance if OE
= V
IH
.
24. If CE
goes HIGH simultaneously with WE HIGH, the output remains in high impedance state.
25. During this period, the I/Os are in output state. Do not apply input signals.
CY62148ESL MoBL
®
Document Number: 001-50045 Rev. *J Page 9 of 16
Figure 6. Write Cycle No. 1 (CE Controlled)
[26, 27]
Figure 7. Write Cycle No. 2 (WE Controlled)
[27]
Switching Waveforms (continued)
t
WC
DATA
IN
VALID
t
AW
t
SA
t
PWE
t
HA
t
HD
t
SD
t
SCE
ADDRESS
CE
DATA I/O
WE
DATA
IN
VALID
t
HD
t
SD
t
LZWE
t
PWE
t
SA
t
HA
t
AW
t
SCE
t
WC
t
HZWE
ADDRESS
CE
WE
DATA I/O
NOTE
28
Notes
26. Data I/O is high impedance if OE
= V
IH
.
27. If CE
goes HIGH simultaneously with WE HIGH, the output remains in high impedance state.
28. During this period, the I/Os are in output state. Do not apply input signals.

CY62148ESL-55ZAXI

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 4Mb 55ns 512K x 8 Low Power SRAM
Lifecycle:
New from this manufacturer.
Delivery:
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