CY7C1461AV33
CY7C1463AV33
Document Number: 38-05356 Rev. *O Page 9 of 24
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ places
the SRAM in a power conservation sleep mode. Two clock cycles
are required to enter into or exit from this sleep mode. When in
this mode, data integrity is guaranteed. Accesses pending when
entering the sleep mode are not considered valid nor is the
completion of the operation guaranteed. The device must be
deselected prior to entering the sleep mode. CE
1
, CE
2
, and CE
3
,
must remain inactive for the duration of t
ZZREC
after the ZZ input
returns LOW.
Interleaved Burst Address Table
(MODE = Floating or V
DD
)
First
Address
A1:A0
Second
Address
A1:A0
Third
Address
A1:A0
Fourth
Address
A1:A0
00 01 10 11
01 00 11 10
10 11 00 01
11 10 01 00
Linear Burst Address Table
(MODE = GND)
First
Address
A1:A0
Second
Address
A1:A0
Third
Address
A1:A0
Fourth
Address
A1:A0
00 01 10 11
01 10 11 00
10 11 00 01
11 00 01 10
ZZ Mode Electrical Characteristics
Parameter Description Test Conditions Min Max Unit
I
DDZZ
Sleep mode standby current ZZ > V
DD
– 0.2 V 100 mA
t
ZZS
Device operation to ZZ ZZ > V
DD
– 0.2 V 2t
CYC
ns
t
ZZREC
ZZ recovery time ZZ < 0.2 V 2t
CYC
–ns
t
ZZI
ZZ active to sleep current This parameter is sampled 2t
CYC
ns
t
RZZI
ZZ Inactive to exit sleep current This parameter is sampled 0 ns
CY7C1461AV33
CY7C1463AV33
Document Number: 38-05356 Rev. *O Page 10 of 24
Truth Table
The truth table for CY7C1461AV33/CY7C1463AV33 follows.
Operation
[1, 2, 3, 4, 5, 6, 7]
Address Used
CE
1
CE
2
CE
3
ZZ ADV/LD WE BW
X
OE CEN CLK DQ
Deselect Cycle None H X X L L X X X L L->H Tristate
Deselect Cycle None X X H L L X X X L L->H Tristate
Deselect Cycle None X L X L L X X X L L->H Tristate
Continue Deselect Cycle None X X X L H X X X L L->H Tristate
Read Cycle (Begin Burst) External L H L L L H X L L L->H Data Out (Q)
Read Cycle (Continue Burst) Next X X X L H X X L L L->H Data Out (Q)
NOP/Dummy Read
(Begin Burst)
External L H L L L H X H L L->H Tristate
Dummy Read (Continue Burst) Next X X X L H X X H L L->H Tristate
Write Cycle (Begin Burst) External L H L L L L L X L L->H Data In (D)
Write Cycle (Continue Burst) Next X X X L H X L X L L->H Data In (D)
NOP/Write Abort (Begin Burst) None L H L L L L H X L L->H Tristate
Write Abort (Continue Burst) Next X X X L H X H X L L->H Tristate
Ignore Clock Edge (Stall) Current X X X L X X X X H L->H
Sleep Mode None XXXH X XXXXX Tristate
Notes
1. X = “Don't Care.” H = logic HIGH, L = logic LOW. BW
x = L signifies at least one byte write select is active, BWx = Valid signifies that the desired byte write selects
are asserted, see truth table for details.
2. Write is defined by BW
X
, and WE. See truth table for read or write.
3. When a write cycle is detected, all IOs are tristated, even during byte writes.
4. The DQs and DQP
X
pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
5. CEN
= H, inserts wait states.
6. Device powers up deselected and the IOs in a tri-state condition, regardless of OE
.
7. OE
is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQs and DQP
X
= Tri-state when OE is
inactive or when the device is deselected, and DQs and DQP
X
= data when OE is active.
CY7C1461AV33
CY7C1463AV33
Document Number: 38-05356 Rev. *O Page 11 of 24
Truth Table for Read/Write
Function (CY7C1461AV33)
[8, 9]
WE BW
A
BW
B
BW
C
BW
D
Read H X X X X
Write – No Bytes Written L H H H H
Write Byte A (DQ
A
and DQP
A
)LLHHH
Write Byte B – (DQ
B
and DQP
B
)LHLHH
Write Byte C – (DQ
C
and DQP
C
)LHHLH
Write Byte D – (DQ
D
and DQP
D
)LHHHL
Write All Bytes L L L L L
Truth Table for Read/Write
Function (CY7C1463AV33)
[8, 9]
WE BW
b
BW
a
Read H X X
Write – No Bytes Written L H H
Write Byte a – (DQ
a
and
DQP
a
)LHL
Write Byte b – (DQ
b
and
DQP
b
)LLH
Write Both Bytes L L L

CY7C1461AV33-133AXI

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 36Mb 3.3V 133Mhz 1Mx36 Flow-Thru SRAM
Lifecycle:
New from this manufacturer.
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