A
Microchip Technology Company
©2011 Silicon Storage Technology, Inc. DS-25018A 05/11
Data Sheet
www.microchip.com
16 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1601C / SST39VF1602C
Features
Organized as 1M x16: SST39VF1601C/1602C
Single Voltage Read and Write Operations
2.7-3.6V
Superior Reliability
Endurance: 100,000 Cycles (Typical)
Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
Active Current: 9 mA (typical)
Standby Current: 3 µA (typical)
Auto Low Power Mode: 3 µA (typical)
Hardware Block-Protection/WP# Input Pin
Top Block-Protection (top 8 KWord)
Bottom Block-Protection (bottom 8 KWord)
Sector-Erase Capability
Uniform 2 KWord sectors
Block-Erase Capability
Flexible block architecture; one 8-, two 4-, one 16-, and
thirty one 32-KWord blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Latched Address and Data
Security-ID Feature
SST: 128 bits; User: 128 words
Fast Read Access Time:
–70ns
Fast Erase and Word-Program:
Sector-Erase Time: 18 ms (typical)
Block-Erase Time: 18 ms (typical)
Chip-Erase Time: 40 ms (typical)
Word-Program Time: 7 µs (typical)
Automatic Write Timing
Internal V
PP
Generation
End-of-Write Detection
Toggle Bits
Data# Polling
Ready/Busy# Pin
CMOS I/O Compatibility
JEDEC Standard
Flash EEPROM Pinouts and command sets
Packages Available
48-lead TSOP (12mm x 20mm)
48-ball TFBGA (6mm x 8mm)
48-ball WFBGA (4mm x 6mm)
All devices are RoHS compliant
The SST39VF1601C / SST39VF1602C devices are 1M x16 CMOS Multi-Purpose
Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS
SuperFlash technology. The split-gate cell design and thick-oxide tunneling injec-
tor attain better reliability and manufacturability compared with alternate
approaches. The SST39VF1601C / SST39VF1602C write (Program or Erase)
with a 2.7-3.6V power supply. These devices conforms to JEDEC standard pin-
outs for x16 memories.
©2011 Silicon Storage Technology, Inc. DS-25018A 05/11
2
16 Mbit Multi-Purpose Flash Plus
SST39VF1601C / SST39VF1602C
Data Sheet
A
Microchip Technology Company
Product Description
The SST39VF1601C and SST39VF1602C devices are 1M x16 CMOS Multi-Purpose Flash Plus
(MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability
compared with alternate approaches. The SST39VF160xC writes (Program or Erase) with a 2.7-3.6V
power supply. These devices conform to JEDEC standard pinouts for x16 memories.
Featuring high performance Word-Program, the SST39VF1601C/1602C devices provide a typical
Word-Program time of 7 µsec. These devices use Toggle Bit, Data# Polling, or the RY/BY# pin to indi-
cate the completion of Program operation. To protect against inadvertent write, they have on-chip hard-
ware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum
of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data
retention is rated at greater than 100 years.
The SST39VF1601C/1602C devices are suited for applications that require convenient and economi-
cal updating of program, configuration, or data memory. For all system applications, they significantly
improve performance and reliability, while lowering power consumption. They inherently use less
energy during Erase and Program than alternative flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and has a shorter erase time, the total energy
consumed during any Erase or Program operation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for program, data, and configuration storage
applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-
gram times increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the SST39VF1601C/1602C are offered in 48-lead
TSOP, 48-ball TFBGA, and 48-ball WFBGA packages. See Figures 2, 3, and 4 for pin assignments.
©2011 Silicon Storage Technology, Inc. DS-25018A 05/11
3
16 Mbit Multi-Purpose Flash Plus
SST39VF1601C / SST39VF1602C
Data Sheet
A
Microchip Technology Company
Block Diagram
Figure 1: Functional Block Diagram
Y-Decoder
I/O Buffers and Data Latches
1380 B1.0
Address Buffer Latches
X-Decoder
DQ
15
-DQ
0
Memory Address
OE#
CE#
WE#
SuperFlash
Memory
Control Logic
WP#
RESET#
RY/BY#

SST39VF1601C-70-4C-EKE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 16M (1Mx16) 70ns Commercial Temp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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