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SIT3373AI-1E2-33EG644.531250X

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
SiT3373
220 MHz to 725 MHz Ultra-low Jitter Differential VCXO
Rev 1.03
Page 4 of 16 www.sitime.com
Table 4. Electrical Characteristics – HCSL – Specific
Parameter Symbol Min. Typ. Max. Unit Condition
Current Consumption
Current Consumption
Idd – – 102 mA Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE Disable Supply Current
I_OE – – 67 mA OE = Low
Output Disable Leakage Current
I_leak – 0.15 –
µA
OE = Low
Maximum Output Current
I_driver
–
–
36 mA Maximum average current drawn from OUT+ or OUT-
Output Characteristics
Output High Voltage
VOH 0.6 – 0.90
V
See Figure 3
Output Low Voltage
VOL -0.05 – 0.08
V
See Figure 3
Output Differential Voltage Swing
V_Swing 1.2 1.4 1.8
V
See Figure 4
Rise/Fall Time
Tr, Tf – 360 470 ps
Measured with 2 pF capacitive loading to GND, 20% to 80%,
see Figure 4
Jitter – 7.0 x 5.0 mm package
RMS Period Jitter
[3]
T_jitt – 1.0 1.6 ps
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3V or 2.5V,
Pull Range = 100 ppm.
RMS Phase Jitter (random)
T_phj – 0.215 0.265 ps
f = 322.265625 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs, Pull Range = 100 ppm.
– 0.215 0.282 ps
f = 322.265625 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs, pull range = 100 ppm.
Temperature ranges -20 to 70ºC and -40 to 85ºC.
– 0.1 – ps
f = 156.25 or 322.265625 MHz, IEEE802.3-2005 10GbE jitter
mask integration bandwidth = 1.875 MHz to 20 MHz, includes
spurs, all Vdd levels.
Jitter – 5.0 x 3.2 mm and 3.2 x 2.5 mm packages
RMS Period Jitter
[3]
T_jitt – 1.0 1.6 ps
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3V or 2.5V,
Pull Range = 100 ppm.
RMS Phase Jitter (random)
T_phj 0.235 0.282 0.215
f = 322.265625 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs, pull range = 100 ppm.
Temperature ranges -20 to 70ºC and -40 to 85ºC.
0.235 0.305 0.215
f = 322.265625 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs, pull range = 100 ppm.
Temperature ranges -40 to 95 ºC and -40 to 105ºC
0.1 – 0.1
f = 156.25 or 322.265625 MHz, IEEE802.3-2005 10GbE jitter mask
integration bandwidth = 1.875 MHz to 20 MHz, includes spurs, all
Vdd levels.
Notes:
3. Measure according to JESD65B.
SiT3373
220 MHz to 725 MHz Ultra-low Jitter Differential VCXO
Rev 1.03
Page 5 of 16 www.sitime.com
Table 5. Pin Description
Pin Symbol Functionality
1 VIN Input Control Voltage
2 NC/OE
No Connect
(NC)
No Connect: Leave floating or connect to GND for better heat dissipation. NC for all 3.2 x 2.5 mm
package options.
Output Enable
(OE)
H
[4,5]
: specified frequency output
L: output is high impedance. Only output driver is disabled. OE function only available on 7050
package. Pin 2 on 3225 package is NC.
3 GND Power Vdd Power Supply Ground
4 OUT+ Output Oscillator output
5 OUT- Output Complementary oscillator output
6 Vdd Power
Power supply voltage
[6]
Top View
Top View
Figure 1. Pin Assignments
(7.0 x 5.0 mm and
5.0 x 3.2 mm packages)
Figure 2. Pin Assignments
(3.2 x 2.5 mm package)
Notes:
4. A pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven.
5. OE mode is only available in the 7050 and 5032 packages. 3225 package is NC.
6. A capacitor of value 0.1 µF or higher between Vdd and GND is required. An additional 10 µF capacitor between Vdd and GND is required for the best
phase jitter performance.
SiT3373
220 MHz to 725 MHz Ultra-low Jitter Differential VCXO
Rev 1.03
Page 6 of 16 www.sitime.com
Table 6. Absolute Maximum Ratings
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter Min. Max. Unit
Vdd
-0.5 4.0
V
VIH
Vdd + 0.3V
V
VIL
-0.3
V
Storage Temperature
-65 150 ºC
Maximum Junction Temperature
130 ºC
Soldering Temperature (follow standard Pb-free soldering guidelines)
260 ºC
Table 7. Thermal Considerations
[7]
Package
θ
JA
, 4 Layer Board (°C/W)
θ
JC
, Bottom (°C/W)
3225, 6-pin
80 30
5032, 6-pin
TBD TBD
7050, 6-pin
52 19
Notes:
7. Refer to JESD51 for θJA and θJC definitions, and reference layout used to determine the θJA and θJC values in the above table.
Table 8. Maximum Operating Junction Temperature
[8]
Max Operating Temperature (ambient) Maximum Operating Junction Temperature
70°C 95°C
85°C 110°C
95°C 120°C
105°C 130°C
Notes:
8. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 9. Environmental Compliance
Parameter
Test Conditions
Value Unit
Mechanical Shock Resistance MIL-STD-883F, Method 2002
10,000
g
Mechanical Vibration Resistance MIL-STD-883F, Method 2007
70
g
Soldering Temperature (follow standard Pb free soldering guidelines) MIL-STD-883F, Method 2003
260 °C
Moisture Sensitivity Level MSL1 @ 260°C
Electrostatic Discharge (HBM) HBM, JESD22-A114
2,000
V
Charge-Device Model ESD Protection JESD220C101
750
V
Latch-up Tolerance
JESD78 Compliant
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

SIT3373AI-1E2-33EG644.531250X

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Description:
644.53125MHz, LVPECL, -40 to 85C, 25PPM, Voltage Control 150 PPM PR, 7.0x5.0, 3.3V, 250 pcs T&R
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