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Table 4. Electrical Characteristics
1
(Temperature range -20°C to +70°C). All the parameters are specified @ Vdd=3.3V and T=25°C unless
otherwise noted.
Notes: 1. Product is factory calibrated at 3.3V.The device can be used from 2.7 V to 3.6 V
2. Typical specifications are not guaranteed.
3. Turn on time is related to output rate and it's defined as: Ton =6/DR.Ton time is the time between leaving Power Down mode and
reaching 99% of actual acceleration value.
3 Absolute Maximum Rating
Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device under these conditions is not implied.
Exposure to maximum rating conditions for extended periods may affect device reliability.
Table 5. Absolute Maximum Rating
Symbol Parameter Test Condition Min.
Typ.
2
Max. Unit
Vdd Supply Voltage 2.7 3.3 3.6 V
Vdd_IO I/O pads Supply Voltage 1.8 Vdd+0.1 V
Idd Supply Current T = 25°C 1 1.5 mA
IddPdn Current Consumption in
Power-Down Mode
T = 25°C 15 µA
BW Digital Filter Cut-Off
frequency (-3dB)
Dec factor = 128 70 Hz
Dec factor = 64 140 Hz
Dec factor = 32 280 Hz
Dec factor = 8 1120 Hz
DR Output Data Rate Dec factor = 128 280 Hz
Dec factor = 64 560 Hz
Dec factor = 32 1120 Hz
Dec factor = 8 4480 Hz
F
max
SPI Frequency Vdd_IO<2.4V 4 MHz
Vdd_IO>2.4V 8 MHz
Ton Turn on time at exit from
Power Down Mode
3
6/DR ms
Symbol Ratings Maximum Value Unit
Vdd Supply Voltage -0.3 to 6 V
Vdd_IO I/O pads Supply Voltage -0.3 to Vdd +0.1 V
Vin Input Voltage on any control pin
(CS, SCL/SPC, SDA/SDI/SDO,SDO,RDY/INT)
-0.3 to Vdd +0.3 V
A
POW
Acceleration (Any axis, Powered, Vdd=3.3V) 3000g for 0.5 ms
10000g for 0.1 ms
A
UNP
Acceleration (Any axis, Not Powered) 3000g for 0.5 ms
10000g for 0.1 ms
T
STG
Storage Temperature Range -40 to +125 °C
ESD Electrostatic Discharge Protection 1 (HBM) kV
200 (MM) V
1.5 (CDM) kV
This is an ESD sensitive device, improper handling can cause permanent damages to the part
This is a Mechanical Shock sensitive device, improper handling can cause permanent damages to the part
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LIS3L02DQ
3.1 Terminology
3.1.1 Sensitivity
Sensitivity describes the gain of the sensor and can be determined e.g. by applying 1g acceleration to it.
As the sensor can measure DC accelerations this can be done easily by pointing the axis of interest to-
wards the center of the earth, note the output value, rotate the sensor by 180 degrees (point to the sky)
and note the output value again. By doing so, ±1g acceleration is applied to the sensor. Subtracting the
larger output value from the smaller one and divide the result by 2 leads to the actual sensitivity of the
sensor. This value changes very little over temperature (see sensitivity temperature change) and also very
little over time. The Sensitivity Tolerance describes the range of Sensitivities of a large population of sen-
sors.
3.1.2 Zero g level
Zero-g level (Offset) describes the deviation of an actual output signal from the ideal output signal if there
is no acceleration present. A sensor in a steady state on a horizontal surface will measure 0g in X axis
and 0g in Y axis whereas the Z axis will measure 1g. The output is ideally in the middle of the dynamic
range of the sensor (0000 0000 0000). A deviation from this value is called zero-g offset; the coding is
based two's complement. Offset is to some extend a result of stress to a precise MEMS sensor and there-
fore the offset can slightly change after mounting the sensor onto a printed circuit board or exposing it to
extensive mechanical stress. Offset changes little over temperature, see “Zero g level change vs. temper-
ature”. The Zero-g level of an individual sensor is very stable over lifetime. The Zero g level tolerance de-
scribes the range of zero g levels of a population of sensors.
3.1.3 Self Test
Self Test allows to test the mechanical and electrical part of the sensor. By applying a digital code via the
serial interface to the sensor an internal reference is switched to a certain area of the sensor and creates
a defined deflection of the moveable structure. The sensor will generate a defined signal and the interface
chip will perform the signal conditioning. If the output signal changes within the specified amplitude than
the sensor is working properly and the parameters of the interface chip are within tolerance. Self Test
changes linearly with power supply.
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4 Functionality
4.1 Sensing element
A proprietary process is utilized to create a surface micro-machined accelerometer. The technology allows
to carry out suspended silicon structures which are attached to the substrate in a few points called anchors
and are free to move on a plane parallel to the substrate itself. To be compatible with the traditional pack-
aging techniques a cap is placed on top of the sensing element to avoid blocking the moving parts during
the moulding phase of the plastic encapsulation.
When an acceleration is applied, the proof mass displaces from its nominal position, causing an imbalance
in the capacitive half-bridge. This imbalance is measured using charge integration in response to a voltage
pulse applied to the sense capacitors.
The nominal value of the capacitors, at steady state, are a few pF and when an acceleration is applied the
maximum variation of the capacitive load is up to 100 fF.
4.2 IC Interface
The complete measurement chain is composed of a low-noise capacitive charge amplifier which converts
the capacitive unbalanced signal of the MEMS sensor into an analog voltage. Three Σ∆ analog-to-digital
converters, one for each axis, translate the signal into a digital bitstream.
The Σ∆ converters are tightly coupled with dedicated reconstruction filters which remove the high frequen-
cy components of the quantization noise and provide high resolution digital words.
The charge amplifier and the Σ∆ converters are operated at 107.5 kHz and 35.8 kHz.
The data rate at the output of the reconstruction filters depends on the user selected Decimation Factors
(DF) and are selectable from 280 Hz to 4.48 kHz.
The acceleration data may be accessed through an I
2
C/SPI interface thus making the device particularly
suitable for direct interfacing with a microcontroller.
The LIS3L02DQ features a Data-Ready signal (RDY) which indicates when a new set of measured accel-
eration data is available thus simplifying data synchronization in digital systems.
The LIS3L02DQ may also be configured to generate an inertial wake-up/interrupt signal when a program-
mable acceleration threshold is exceeded along one of the three axes.
4.3 Factory calibration
The IC interface is factory calibrated to provide a ready to use device. The parameters which are trimmed
are: gain, offset, common mode and internal clock frequency.
The trimming values are stored inside the device by a non volatile structure. Any time the device is turned
on, the trimming parameters are downloaded into the registers to be employed during the normal opera-
tion.This allows the user to employ the device without any further calibration.

EK3L02DQ

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Manufacturer:
STMicroelectronics
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Acceleration Sensor Development Tools EVAL FOR LIS3L02DQ
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