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BTA201W-800E,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
BTA201W-800E
3Q Hi-Com triac
15 June 2016 Product data sheet
1. General description
Planar passivated high commutation triac in a SOT223 surface mounted plastic package. This
"series E" triac balances the requirements of commutation performance and gate sensitivity and is
intended for interfacing with low power drivers and logic ICs including microcontrollers.
2. Features and benefits
• 3Q technology for improved noise immunity
• Direct triggering from low power drivers and logic ICs
• High commutation capability with sensitive gate
• High immunity to false turn-on by dV/dt
• High voltage capability
• Planar passivated for voltage ruggedness and reliability
• Sensitive gate for easy logic level triggering
• Surface mountable package
• Triggering in three quadrants only
3. Applications
• General purpose motor control
• Small loads in washing machines
• Solenoid drivers
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 800 V
I
T(RMS)
RMS on-state current full sine wave; T
sp
≤ 106 °C; Fig. 1;
Fig. 2; Fig. 3
- - 1 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- - 13.7 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 12.5 A
T
j
junction temperature - - 125 °C
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 9
1 - 10 mA
WeEn Semiconductors
BTA201W-800E
3Q Hi-Com triac
BTA201W-800E All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 15 June 2016 2 / 16
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 9
1 - 10 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 9
1 - 10 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 11 - - 12 mA
V
T
on-state voltage I
T
= 1.4 A; T
j
= 25 °C; Fig. 12 - 1.3 1.5 V
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit; Fig. 14
600 - - V/µs
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 1 A;
dV
com
/dt = 20 V/s; (snubberless
condition); gate open circuit
2.5 - - A/msdI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 1 A;
dV
com
/dt = 10 V/s; gate open circuit
3.5 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
4 T2 main terminal 2
1 32
4
SC-73 (SOT223)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BTA201W-800E SC-73 plastic surface-mounted package with increased heatsink; 4
leads
SOT223
WeEn Semiconductors
BTA201W-800E
3Q Hi-Com triac
BTA201W-800E All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 15 June 2016 3 / 16
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 800 V
I
T(RMS)
RMS on-state current full sine wave; T
sp
≤ 106 °C; Fig. 1; Fig. 2;
Fig. 3
- 1 A
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms - 13.7 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
- 12.5 A
I
2
t I
2
t for fusing t
p
= 10 ms; SIN - 0.78 A²s
dI
T
/dt rate of rise of on-state
current
I
G
= 0.2 A - 100 A/µs
I
GM
peak gate current - 1 A
P
GM
peak gate power - 2 W
P
G(AV)
average gate power over any 20ms period - 0.1 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
003aak514
2
4
6
I
T(RMS)
(A)
0
surge duration (s)
10
-2
10110
-1
f = 50 Hz; T
sp
= 106 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
T
sp
(°C)
-50 1501000 50
003aak515
I
T(RMS)
(A)
0.4
0.8
1.2
0.2
0.6
1.0
0
Fig. 2. RMS on-state current as a function of solder
point temperature; maximum values
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BTA201W-800E,115

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Manufacturer:
WeEn Semiconductors
Description:
Triacs THYR AND TRIACS
Lifecycle:
New from this manufacturer.
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