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BTA201W-800E,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
WeEn Semiconductors
BTA201W-800E
3Q Hi-Com triac
BTA201W-800E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
15 June 2016
7 / 16
001aab508
3.8 min
1.5
min
1.5
min
(3×)
2.3
4.6
6.3
1.5
min
All dimensions are in mm
Fig. 7. Minimum footprint SOT223
001aab509
7
4.6
15
36
9
10
18
4.5
60
50
All dimensions are in mm
Printed circuit board:
FR4 epoxy glass (1.6 mm thick), copper laminate
(35 um thick)
Fig. 8. Printed circuit board pad area: SOT223
WeEn Semiconductors
BTA201W-800E
3Q Hi-Com triac
BTA201W-800E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
15 June 2016
8 / 16
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 9
1
-
10
mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 9
1
-
10
mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 9
1
-
10
mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 10
-
-
12
mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 10
-
-
12
mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 10
-
-
12
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 11
-
-
12
mA
V
T
on-state voltage
I
T
= 1.4 A; T
j
= 25 °C;
Fig. 12
-
1.3
1.5
V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 13
-
0.7
1
V
V
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 13
0.2
0.3
-
V
I
D
off-state current
V
D
= 800 V; T
j
= 125 °C
-
0.1
0.5
mA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit;
Fig. 14
600
-
-
V/µs
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 1 A;
dV
com
/dt = 20 V/s; (snubberless
condition); gate open circuit
2.5
-
-
A/ms
dI
com
/dt
rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 1 A;
dV
com
/dt = 10 V/s; gate open circuit
3.5
-
-
A/ms
WeEn Semiconductors
BTA201W-800E
3Q Hi-Com triac
BTA201W-800E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
15 June 2016
9 / 16
I
GT
I
GT(25°C)
T
j
(°C)
-
50
0
150
100
50
1
2
3
0
003aaa959
(1)
(2)
(3)
(1)
(2)
(3)
(1) T2- G-
(2) T2+ G-
(3) T2+ G+
Fig. 9. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50
150
100
0
50
003aak510
1
2
3
0
I
L
I
L(25°C)
Fig. 10. Normalized latching current as a function of
junction temperature
T
j
(°C)
-50
150
100
0
50
003aak51
1
1
2
3
0
I
H
I
H(25°C)
Fig. 11. Normalized holding current as a function of
junction temperature
V
T
(V)
0
0
.
4
0
.
8
1
.
2
1
.
6
2
0
0
.
4
0
.
8
1
.
2
1.
6
2
(A)
I
T
(1)
(2)
(3)
003aaa960
V
o
= 1.02 V; R
s
= 0.358 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 12. On-state current as a function of on-state
voltage
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
BTA201W-800E,115
Mfr. #:
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Manufacturer:
WeEn Semiconductors
Description:
Triacs THYR AND TRIACS
Lifecycle:
New from this manufacturer.
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