Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
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the references to Nexperia, as shown below.
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use http://www.nexperia.com
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Kind regards,
Team Nexperia
1. Product profile
1.1 General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS5620PA.
1.2 Features and benefits
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
[1] Pulse test: t
p
300 μs; δ≤0.02.
PBSS4620PA
20 V, 6 A NPN low V
CEsat
(BISS) transistor
Rev. 01 — 18 May 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - 20 V
I
C
collector current - - 6 A
I
CM
peak collector current single pulse;
t
p
1ms
--7A
R
CEsat
collector-emitter
saturation resistance
I
C
=6A;
I
B
=300mA
[1]
-3346mΩ
PBSS4620PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 18 May 2010 2 of 15
NXP Semiconductors
PBSS4620PA
20 V, 6 A NPN low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1base
2emitter
3 collector
Transparent top view
12
3
sym02
1
3
2
1
Table 3. Ordering information
Type number Package
Name Description Version
PBSS4620PA HUSON3 plastic thermal enhanced ultra thin small outline package;
no leads; three terminals; body 2 × 2 × 0.65 mm
SOT1061
Table 4. Marking codes
Type number Marking code
PBSS4620PA A6
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 20 V
V
CEO
collector-emitter voltage open base - 20 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 6 A
I
CM
peak collector current single pulse;
t
p
1ms
-7A
I
B
base current - 600 mA
P
tot
total power dissipation T
amb
25 °C
[1]
-500mW
[2]
-1W
[3]
-1.4W
[4]
-2.1W

PBSS4620PA,115

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 20V 6A NPN LO VCEsat TRANSISTOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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